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Author

W.A. Tabisz

Bio: W.A. Tabisz is an academic researcher. The author has contributed to research in topics: Power semiconductor device & Field-effect transistor. The author has an hindex of 3, co-authored 3 publications receiving 423 citations.

Papers
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Journal ArticleDOI
11 Apr 1988
TL;DR: In this paper, a novel multiresonant switch concept is proposed to overcome the parasitic oscillations caused by the junction capacitance of the rectifying diode, which results in favorable switching conditions for all devices.
Abstract: The power transistor in zero-current-switched quasiresonant converters (ZCS-QRCs) suffers from excessive voltage stress, and the converter regulation characteristics and stability are adversely affected by parasitic oscillations caused by the junction capacitance of the rectifying diode. A novel, multiresonant switch concept is proposed to overcome these problems. A unique multiresonant network arrangement results in absorption of all parasitic components, including transistor output capacitance, diode junction capacitance, and transformer leakage inductance, in the resonant circuit. This results in favorable switching conditions for all devices. Experimental results show that ZVS multiresonant converters are superior to ZVS-QRCs due to reduced transistor voltage stress and improved load range and stability. >

344 citations

Journal ArticleDOI
TL;DR: In this article, the characteristics and limitations of the half-bridge zero-voltage-switched (ZVS) quasi-resonant converters (QRCs) are described.
Abstract: The characteristics and limitations of the half-bridge zero-voltage-switched (ZVS) quasi-resonant converters (QRCs) are described. A novel multiresonant concept is proposed for the half-bridge topology to improve the ZVS QRC's load range. Experimental results for 300 V. 75 W zero-voltage-switched quasi-resonant and multiresonant converters operating in the frequency range from 2 MHz to 8 MHz are presented. >

44 citations

Proceedings Article
01 Jan 1989
TL;DR: In this article, the characteristics and limitations of the half-bridge zero-voltage-switched (ZVS) quasi-resonant converters are described and a novel multiresonant switch concept is proposed for the half bridge topology to improve the ZVS QRC's load range.
Abstract: The characteristics and limitations of the half-bridge zero-voltage-switched (ZVS) quasi-resonant converters (QRC's) are described. A novel multiresonant switch concept is proposed for the half-bridge topology to improve the ZVS QRC's load range. Experimental result for 300-V 75-W zero-voltage-switched quasi-resonant and multiresonant converters operating in the frequency range of 2 MHz to 8 MHz are presented

41 citations


Cited by
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Journal ArticleDOI
02 Oct 1988
TL;DR: In this paper, three DC/DC converter topologies suitable for high power-density high power applications are presented, which operate in a soft-switched manner, making possible a reduction in device switching losses and an increase in switching frequency.
Abstract: Three DC/DC converter topologies suitable for high-power-density high-power applications are presented. All three circuits operate in a soft-switched manner, making possible a reduction in device switching losses and an increase in switching frequency. The three-phase dual-bridge converter proposed is shown to have the most favorable characteristics. This converter consists of two three-phase inverter stages operating in a high-frequency six-step mode. In contrast to existing single-phase AC-link DC/DC converters, lower turn-off peak currents in the power devices and lower RMS current ratings for both the input and output filter capacitors are obtained. This is in addition to smaller filter element values due to the higher-frequency content of the input and output waveforms. Furthermore, the use of a three-phase symmetrical transformer instead of single-phase transformers and a better utilization of the available apparent power of the transformer (as a consequence of the controlled output inverter) significantly increase the power density attainable. >

2,056 citations

Journal ArticleDOI
29 Jun 1992
TL;DR: In this paper, a class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses.
Abstract: A class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses. The boost ZVT-PWM converter is used as an example to illustrate the operation of these converters. A 300 kHz, 600 W ZVT-PWM boost, DC-DC converter, and a 100 kHz, 600 W power factor correction circuit using the ZVT-PWM technique and an insulated gate bipolar transistor (IGBT) device were breadboarded to show the operation of the proposed converters. It is shown that the circuit technology greatly improves the converter performance in terms of efficiency, switching noise, and circuit reliability. >

896 citations

Proceedings ArticleDOI
11 Mar 1990
TL;DR: In this article, a steady-state analysis is presented with complete characterization of the converter operation and the design procedures based on the analysis are presented and the various losses in the circuit assessed.
Abstract: A steady-state analysis is presented with complete characterization of the converter operation. A small-signal model of the converter is established. The design procedures based on the analysis are presented and the various losses in the circuit assessed. Critical design considerations for a high-power, high-voltage application are analyzed. The results of the analysis are verified using a high-voltage. 2 kW prototype. >

875 citations

Journal ArticleDOI
20 Jun 1993
TL;DR: In this article, a new family of zero-current transition (ZCT) pulsewidth-modulated (PWM) converters is proposed for high power applications where the minority-carrier semiconductor devices (such as IGBTs, BJTs, and MCTs) are predominantly used as the power switches.
Abstract: A new family of zero-current-transition (ZCT) pulse-width-modulated (PWM) converters are proposed. The new family of converters implements zero-current turn-off for power transistor(s) without increasing voltage/current stresses and operates at a fixed frequency. The proposed converters are deemed most suitable for high-power applications where the minority-carrier semiconductor devices (such as IGBTs, BJTs, and MCTs) are predominantly used as the power switches. Theoretical analysis is verified on a 100-kHz, 1-kW ZCT-PWM boost converter using an IGBT. >

384 citations

Proceedings ArticleDOI
21 Mar 2009
TL;DR: In this article, the scaling of magnetic component size with frequency is investigated, and it is shown that substantial miniaturization is possible with increased frequencies even considering material and heat transfer limitations.
Abstract: THIS paper explores opportunities and challenges in power conversion in the VHF frequency range of 30-300 MHz. The scaling of magnetic component size with frequency is investigated, and it is shown that substantial miniaturization is possible with increased frequencies even considering material and heat transfer limitations. Likewise, dramatic frequency increases are possible with existing and emerging semiconductor devices, but necessitate circuit designs that either compensate for or utilize device parasitics. We outline the characteristics of topologies and control methods that can meet the requirements of VHF power conversion, and present supporting examples from power converters operating at frequencies of up to 110 MHz.

371 citations