W. Skorupa

Bio: W. Skorupa is an academic researcher. The author has contributed to research in topics: Strained silicon & Nitride. The author has an hindex of 1, co-authored 1 publications receiving 6 citations.

Diffusion inhibition against gold of ion beam synthesized buried silicon nitride layers in silicon

Abstract: The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested. Buried amorphous layers characteristic for the as-implanted state as well as for postimplantation annealing at 1000°C show diffusion inhibition. This effect was not found for polycrystalline silicon nitride layers produced by annealing at 1200° C.

Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

Abstract: The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied. By using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopy we have shown that there is an interrelation between the structure of synthesized layer and the oxygen to nitrogen dose ratio. It has been found that for the chosen implantation and annealing regimes the synthesized structure: consists of buried dielectric, structurally dense, layers which have thicknesses of between 0.12 and 0.185 μm. When the nitrogen to oxygen dose ratio is 3.5, the whole buried layer is amorphous and the interfaces of the buried layer are perfect.

TEM study of combined oxygen and nitrogen implanted silicon

Abstract: Silicon-on-insulator (SOI) structures can be obtained by the combined implantation of oxygen and nitrogen into silicon A thorough transmission electron microscope study of the sequential N and O implantation in Si is reported It is shown that the resulting microstructure strongly depends on the implantation sequence and dose In general the buried layer remains amorphous Only in one case did the lower part of the buried layer crystallize in the α-Si3N4 phase When nitrogen is implanted prior to oxygen, α-Si3N4 precipitates are formed below the buried layer They contain a considerable portion of the implanted nitrogen A particular orientation relationship was found to exist between the α-Si3N4 precipitate and the Si matrix; it was determined as (001)αSi3N4//{111}Si

Ion Beam Processing for Silicon-on-Insulator

Abstract: During the last few years ion beam processing penetrated very aggressively in many branches of advanced solid state technology. This holds also for the modern semiconductor technology in the area of VLSI (Very Large Scale Integration) and ULSI (Ultra Large Scale Integration). SOI (Silicon-on-Insulator) is one of the most discussed candidates of this branch offering the possibility to produce integrated circuits of high packing density, low power consumption and high speed.

Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keV

Abstract: Computed nitrogen distributions for high dose nitrogen implantation ona silicon target are compared with experimental profiles. The energy range of the incoming ions covers an area, where most of the experimental effort in the field of implantation synthesis of buried silicon nitride layers is concentrated. The calculated nitrogen distribution profiles reproduce fairly well both the shape and, with increasing doses, also the trend of the peak of the experimental profiles. Considering the parameters ofthe calculation it must be concluded that both the synthesized silicon nitride and the excess, unbonded nitrogen are in a high density, high pressure state. Modellrechnungen zur Gewinnung der Stickstoffverteilung bei der Hochdosisimplantation von Stickstoffionen in Siliziumtargets werden mit experimentellen Stickstoffprofilen verglichen. Die Einschusenergie der Ionen liegt dabei in solchen Bereichen, wo bisher die meisten Experimente zur Synthese vergrabener Siliziumnitrid-Schichten durchgefuhrt worden sind. Die berechneten Stickstoffverteilungen reproduzieren die Formder gemessenen Profile, sie spiegeln auch den Trend der Verteilungsmaximamit wachsender Einschusdosis recht gut wider. Ein Fit der berechneten Stickstoffverteilungen an die experimentellen Profile fuhrt zu dem Schlus, das sowohl das entstehende Siliziumnitrid als auch der uberflussige, ungebundene Stickstoff eine hohe Dichte hat und unter hohem Druck steht.