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W. Slysz

Bio: W. Slysz is an academic researcher. The author has contributed to research in topics: Radiation hardening & Semiconductor detector. The author has an hindex of 2, co-authored 2 publications receiving 490 citations.

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Journal ArticleDOI
G. Lindström1, M. Ahmed2, Sebastiano Albergo, Phillip Allport3, D.F. Anderson4, Ladislav Andricek5, M. Angarano6, Vincenzo Augelli, N. Bacchetta, P. Bartalini6, Richard Bates7, U. Biggeri, G. M. Bilei6, Dario Bisello, D. Boemi, E. Borchi, T. Botila, T. J. Brodbeck8, Mara Bruzzi, T. Budzyński, P. Burger, Francesca Campabadal9, Gianluigi Casse3, E. Catacchini, A. Chilingarov8, Paolo Ciampolini6, Vladimir Cindro10, M. J. Costa9, Donato Creanza, Paul Clauws11, C. Da Via2, Gavin Davies12, W. De Boer13, Roberto Dell'Orso, M. De Palma, B. Dezillie14, V. K. Eremin, O. Evrard, Giorgio Fallica15, Georgios Fanourakis, H. Feick16, Ettore Focardi, Luis Fonseca9, E. Fretwurst1, J. Fuster9, K. Gabathuler, Maurice Glaser17, Piotr Grabiec, E. Grigoriev13, Geoffrey Hall18, M. Hanlon3, F. Hauler13, S. Heising13, A. Holmes-Siedle2, Roland Horisberger, G. Hughes8, Mika Huhtinen17, I. Ilyashenko, Andrew Ivanov, B.K. Jones8, L. Jungermann13, A. Kaminsky, Z. Kohout19, Gregor Kramberger10, M Kuhnke1, Simon Kwan4, F. Lemeilleur17, Claude Leroy20, M. Letheren17, Z. Li14, Teresa Ligonzo, Vladimír Linhart19, P.G. Litovchenko21, Demetrios Loukas, Manuel Lozano9, Z. Luczynski, Gerhard Lutz5, B. C. MacEvoy18, S. Manolopoulos7, A. Markou, C Martinez9, Alberto Messineo, M. Mikuž10, Michael Moll17, E. Nossarzewska, G. Ottaviani, Val O'Shea7, G. Parrini, Daniele Passeri6, D. Petre, A. Pickford7, Ioana Pintilie, Lucian Pintilie, Stanislav Pospisil19, Renato Potenza, C. Raine7, Joan Marc Rafi9, P. N. Ratoff8, Robert Richter5, Petra Riedler17, Shaun Roe17, P. Roy20, Arie Ruzin22, A.I. Ryazanov23, A. Santocchia18, Luigi Schiavulli, P. Sicho24, I. Siotis, T. J. Sloan8, W. Slysz, Kristine M. Smith7, M. Solanky2, B. Sopko19, K. Stolze, B. Sundby Avset25, B. G. Svensson26, C. Tivarus, Guido Tonelli, Alessia Tricomi, Spyros Tzamarias, Giusy Valvo15, A. Vasilescu, A. Vayaki, E. M. Verbitskaya, Piero Giorgio Verdini, Vaclav Vrba24, Stephen Watts2, Eicke R. Weber16, M. Wegrzecki, I. Węgrzecka, P. Weilhammer17, R. Wheadon, C.D. Wilburn27, I. Wilhelm28, R. Wunstorf29, J. Wüstenfeld29, J. Wyss, K. Zankel17, P. Zabierowski, D. Žontar10 
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

402 citations

Journal ArticleDOI
G. Lindström1, M. Ahmed2, Sebastiano Albergo, Phillip Allport3, D.F. Anderson4, Ladislav Andricek5, M. Angarano6, Vincenzo Augelli, N. Bacchetta, P. Bartalini6, Richard Bates, U. Biggeri, G. M. Bilei6, Dario Bisello7, D. Boemi, E. Borchi, T. Botila, T. J. Brodbeck8, Mara Bruzzi, T. Budzyński, P. Burger, Francesca Campabadal9, Gianluigi Casse3, E. Catacchini, A. Chilingarov8, Paolo Ciampolini6, Vladimir Cindro10, M. J. Costa9, Donato Creanza, Paul Clauws11, C. Da Via2, Gavin Davies12, W. De Boer13, Roberto Dell'Orso, M. De Palma, B. Dezillie14, V. K. Eremin, O. Evrard, Giorgio Fallica15, Georgios Fanourakis, H. Feick16, Ettore Focardi, Luis Fonseca9, Eckhart Fretwurst1, J. Fuster9, K. Gabathuler, Maurice Glaser17, Piotr Grabiec, E. Grigoriev13, Geoffrey Hall18, M. Hanlon3, F. Hauler13, S. Heising13, A. Holmes-Siedle2, Roland Horisberger, G. Hughes8, Mika Huhtinen17, I. Ilyashenko, Andrew Ivanov, B.K. Jones8, L. Jungermann13, A. Kaminsky, Z. Kohout19, Gregor Kramberger10, M Kuhnke1, Simon Kwan4, F. Lemeilleur17, C. Leroy20, M. Letheren17, Z. Li14, Teresa Ligonzo, Vladimír Linhart19, P.G. Litovchenko21, Demetrios Loukas, Manuel Lozano9, Z. Luczynski, G. Lutz5, B. C. MacEvoy18, S. Manolopoulos7, A. Markou, C Martinez9, Alberto Messineo, M. Miku10, Michael Moll17, E. Nossarzewska, G. Ottaviani, Val O'Shea7, G. Parrini, Daniele Passeri6, D. Petre, A. Pickford7, Ioana Pintilie, Lucian Pintilie, Stanislav Pospisil19, Renato Potenza, V. Radicci, C. Raine7, Joan Marc Rafi9, P. N. Ratoff8, Robert Richter5, Petra Riedler17, Shaun Roe17, P. Roy22, Arie Ruzin23, A.I. Ryazanov24, A. Santocchia18, Luigi Schiavulli, P. Sicho25, I. Siotis, T. J. Sloan8, W. Slysz, Kevin M. Smith7, M. Solanky2, B. Sopko19, K. Stolze, B. Sundby Avset26, B. G. Svensson27, C. Tivarus, Guido Tonelli, Alessia Tricomi, S. Tzamarias, Giusy Valvo15, A. Vasilescu, A. Vayaki, E. M. Verbitskaya, Piero Giorgio Verdini, Vaclav Vrba25, Stephen Watts2, Eicke R. Weber16, M. Wegrzecki, I. Węgrzecka, P. Weilhammer17, R. Wheadon, C.D. Wilburn28, I. Wilhelm20, R. Wunstorf29, J. Wüstenfeld29, J. Wyss, K. Zankel17, P. Zabierowski, D. Zontar9 
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

108 citations


Cited by
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Journal ArticleDOI
TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.

5,193 citations

Journal ArticleDOI
Georges Aad1, M. Ackers2, F. Alberti, M. Aleppo3  +264 moreInstitutions (18)
TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

709 citations

Journal ArticleDOI
TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

607 citations

Journal ArticleDOI
TL;DR: In this article, the radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects, both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered.
Abstract: Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

204 citations

Journal ArticleDOI
Mika Huhtinen1
TL;DR: In this paper, a simulation model of migration and clustering of the produced primary defects is developed and it is shown that the model is consistent with experimental observations on standard and oxygen-enriched silicon, but the model makes the rather dramatic prediction that NIEL scaling of leakage current and effective doping concentration can be violated significantly even in standard silicon.
Abstract: Simulation studies of Non-Ionising Energy Loss (NIEL) in silicon exposed to various types of hadron irradiation are presented. A simulation model of migration and clustering of the produced primary defects is developed. Although there are many uncertainties in the input parameters it is shown that the model is consistent with experimental observations on standard and oxygen-enriched silicon. However, the model makes the rather dramatic prediction that NIEL scaling of leakage current and effective doping concentration can be violated significantly even in standard silicon. Although there are possible shortcomings in the model which might account for this, it is shown that at the microscopic level there is, indeed, no obvious reason for an exact NIEL scaling. Furthermore, it is argued that, contrary to common belief, even a significant violation of NIEL scaling can still be consistent with experimental data.

189 citations