W. Suttrop

Bio: W. Suttrop is an academic researcher from Max Planck Society. The author has contributed to research in topics: ASDEX Upgrade & Tokamak. The author has an hindex of 62, co-authored 484 publications receiving 12903 citations. Previous affiliations of W. Suttrop include University of Pittsburgh & European Atomic Energy Community.

First observation of edge localized modes mitigation with resonant and nonresonant magnetic perturbations in ASDEX Upgrade.

Abstract: First experiments with nonaxisymmetric magnetic perturbations, toroidal mode number n=2, produced by newly installed in-vessel saddle coils in the ASDEX Upgrade tokamak show significant reduction of plasma energy loss and peak divertor power load associated with type-I edge localized modes (ELMs) in high-confinement mode plasmas. ELM mitigation is observed above an edge density threshold and is obtained both with magnetic perturbations that are resonant and not resonant with the edge safety factor profile. Compared with unperturbed type-I ELMy reference plasmas, plasmas with mitigated ELMs show similar confinement, similar plasma density, and lower tungsten impurity concentration.

Tungsten: An option for divertor and main chamber plasma facing components in future fusion devices

Abstract: The tungsten programme in ASDEX Upgrade is pursued towards a full high-Z device. The spectroscopic diagnostic of W has been extended and refined and the cooling factor of W has been re-evaluated. The W coated surfaces now represent a fraction of 65% of all plasma facing components (24.8 m(2)). The only two major components that are not yet coated are the strikepoint region of the lower divertor as well as the limiters at the low field side. While extending the W surfaces, the W concentration and the discharge behaviour have changed gradually pointing to critical issues when operating with a W wall: anomalous transport in the plasma centre should not be too low, otherwise neoclassical accumulation can occur. One very successful remedy is the addition of central RF heating at the 20-30% level. Regimes with low ELM activity show increased impurity concentration over the whole plasma radius. These discharges can be cured by increasing the ELM frequency through pellet ELM pacemaking or by higher heating power. Moderate gas puffing also mitigates the impurity influx and penetration, however, at the expense of lower confinement. The erosion yield at the low field side guard limiter can be as high as 10(-3) and fast particle losses from NBI were identified to contribute a significant part to the W sputtering. Discharges run in the upper W coated divertor do not show higher W concentrations than comparable discharges in the lower C based divertor. According to impurity transport calculations no strong high-Z accumulation is expected for the ITER standard scenario as long as the anomalous transport is at least as high as the neoclassical one.

Plasma rotation profile measurements using Doppler reflectometry

Abstract: High spatial resolution radial profiles of the perpendicular plasma rotation velocity u⊥ using a dual channel 50–75 GHz Doppler reflectometer system on the ASDEX Upgrade tokamak are presented for a variety of discharge scenarios, including Ohmic, L-mode, H-mode, etc with forward and reversed magnetic field and co- and counter neutral beam injection. The reflectometers have steppable launch frequencies fo = c/λo, with selectable O- or X-mode polarization, giving tokamak edge to mid-radius coverage. Low-field-side antennae (hog-horn antenna pairs) with deliberate tilting (primarily poloidally) produce a Doppler shifted spectrum directly proportional to the perpendicular velocity fD = u⊥k⊥/2π = u⊥ 2sinθt/λo. The incident angle θt between the beam and cut-off layer normal varies with plasma shape, cut-off layer position and refraction. However, typical angles range from 5° to 27° giving a probed turbulence wavenumber, k⊥, range of 1.8–14.3 cm−1, with resulting Doppler shifts fD of up to 5 MHz. The measured perpendicular velocity is u⊥ = vE × B + vphase, which for a typical H-mode is slightly positive in the tokamak scrape-off-layer with a deep negative well across the H-mode steep pressure gradient pedestal region and then following the perpendicularly projected toroidal fluid velocity in the core, should be dominated by the E × B velocity, as the intrinsic phase velocity is predicted to be small, which may allow u⊥ to be interpreted directly as the radial electric field Er profile.

ELM pace making and mitigation by pellet injection in ASDEX Upgrade

Abstract: In ASDEX Upgrade, experimental efforts aim to establish pace making and mitigation of type-I edge localized modes (ELMs) in high confinement mode (H-mode) discharges. Injection of small size cryogenic deuterium pellets (~(1.4?mm)2 ? 0.2?mm ? 2.5 ? 1019?D) at rates up to 83?Hz imposed persisting ELM control without significant fuelling, enabling for investigations well inside the type-I ELM regime. The approach turned out to meet all required operational features. ELM pace making was realized with the driving frequency ranging from 1 to 2.8 times the intrinsic ELM frequency, the upper boundary set by hardware limits. ELM frequency enhancement by pellet pace making causes much less confinement reduction than by engineering means like heating, gas bleeding or plasma shaping. Confinement reduction is observed in contrast to the typical for engineering parameters. Matched discharges showed triggered ELMs ameliorated with respect to intrinsic counterparts while their frequency was increased. No significant differences were found in the ELM dynamics with the available spatial and temporal resolution. By breaking the close correlation of ELM frequency and plasma parameters, pace making allows the establishment of fELM as a free parameter giving enhanced operational headroom for tailoring H-mode scenarios with acceptable ELMs. Use was made of the pellet pace making tool in several successful applications in different scenarios. It seems that further reduction of the pellet mass could be possible, eventually resulting in less confinement reduction as well.

Identification of plasma-edge-related operational regime boundaries and the effect of edge instability on confinement in ASDEX Upgrade

Abstract: Local edge parameters on the ASDEX Upgrade tokamak are investigated at the L-mode to H-mode transition, during phases with various types of edge-localized modes (ELMs), and at the density limit. A scaling law for the boundary electron temperature, , is found which describes the H-mode threshold for deuterium-puffed discharges with favourable ion -drift direction. The region of stable operation is bounded by type I ELMs near the ideal ballooning limit and by a minimum temperature necessary to avoid thermal instability of the plasma edge. Stationary operation with type III ELMs imposes an upper limit on the edge temperature. Within the entire range of boundary densities investigated , both L-mode and H-mode are found to be accessible. During type I ELMy H-mode, a relation of global confinement with the edge pressure gradient is found which is connected with a loss of the favourable density dependence predicted by the ITER-92P and ITER-93H ELMy H-mode scalings. At high density, better confinement is achieved in H-modes with an edge pressure gradient below the ideal ballooning limit, e.g. during type III ELMy H-mode with impurity-seeded radiation.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Phd by thesis

Abstract: Deposits of clastic carbonate-dominated (calciclastic) sedimentary slope systems in the rock record have been identified mostly as linearly-consistent carbonate apron deposits, even though most ancient clastic carbonate slope deposits fit the submarine fan systems better. Calciclastic submarine fans are consequently rarely described and are poorly understood. Subsequently, very little is known especially in mud-dominated calciclastic submarine fan systems. Presented in this study are a sedimentological core and petrographic characterisation of samples from eleven boreholes from the Lower Carboniferous of Bowland Basin (Northwest England) that reveals a >250 m thick calciturbidite complex deposited in a calciclastic submarine fan setting. Seven facies are recognised from core and thin section characterisation and are grouped into three carbonate turbidite sequences. They include: 1) Calciturbidites, comprising mostly of highto low-density, wavy-laminated bioclast-rich facies; 2) low-density densite mudstones which are characterised by planar laminated and unlaminated muddominated facies; and 3) Calcidebrites which are muddy or hyper-concentrated debrisflow deposits occurring as poorly-sorted, chaotic, mud-supported floatstones. These

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Abstract: In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Semiconductor ultraviolet detectors

Abstract: In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band‐gap semiconductors the most promising ...