scispace - formally typeset
W

W. Van Parys

Researcher at Ghent University

Publications -  18
Citations -  310

W. Van Parys is an academic researcher from Ghent University. The author has contributed to research in topics: Optical isolator & Waveguide (optics). The author has an hindex of 7, co-authored 18 publications receiving 309 citations.

Papers
More filters
Journal ArticleDOI

Dimensioning of survivable WDM networks

TL;DR: Routing, planning of working capacity, rerouting, and planning of spare capacity in wavelength division multiplexing (WDM) networks are investigated and a complex cost model is presented.
Journal ArticleDOI

Architecture and design of optical channel protected ring networks

TL;DR: In this paper, different optical ring architectures are considered and the optical add/drop multiplexer (OADM) functional architecture is described, and different aspects of ring network design and their impact on the network architecture are discussed.
Proceedings ArticleDOI

Reduction of wavelength blocking through partitioning with wavelength convertors

TL;DR: In this article, the authors conclude that the increased management complexity, if no wavelength translators are used, may be a stronger point to justify wavelength translation than the performance increase, which is relatively small.
Proceedings ArticleDOI

Quantifying the benefits of selective wavelength regeneration in ultra long-haul WDM networks

TL;DR: In this paper, the performance of transparent OXCs exploiting selective wavelength regeneration for different maximum transparency lengths was investigated and the tradeoff between increased transparency length and reduced cost assigned to O/E/O regeneration was revealed.
Journal ArticleDOI

Study of a Magnetooptic Contact for an Amplifying Waveguide Optical Isolator

TL;DR: In this paper, an ohmic metal-semiconductor contact was developed for an amplifying waveguide optical isolator. It is the result of magnetooptic waveguide simulations combined with experimental extraction of the contact resistivity, and the optimized contact scheme is a p++-doped hybrid In0.81Ga0.19As0.41P0.59-In 0.53Ga0.$ d47As structure.