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Wanxiang Feng

Researcher at Beijing Institute of Technology

Publications -  64
Citations -  9237

Wanxiang Feng is an academic researcher from Beijing Institute of Technology. The author has contributed to research in topics: Topological insulator & Hall effect. The author has an hindex of 25, co-authored 52 publications receiving 7601 citations. Previous affiliations of Wanxiang Feng include Chinese Academy of Sciences & University of Tennessee.

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Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.
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Quantum spin Hall effect in silicene and two-dimensional germanium.

TL;DR: It is demonstrated that silicene with topologically nontrivial electronic structures can realize the quantum spin Hall effect (QSHE) by exploiting adiabatic continuity and the direct calculation of the Z(2) topological invariant.
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Quantum anomalous Hall effect in graphene from Rashba and exchange effects

TL;DR: In this paper, the authors investigated the possibility of realizing quantum anomalous Hall effect in graphene and showed that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field.
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Large anomalous Hall effect in a half-Heusler antiferromagnet

TL;DR: In this article, the anomalous Hall effect is found in topologically non-trivial half-Heusler antiferromagnets thanks to Berry phase effects associated with symmetry breaking.