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Wanyoung Jang

Researcher at University of California, Berkeley

Publications -  6
Citations -  1363

Wanyoung Jang is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Thermoelectric effect & Thermal conductivity. The author has an hindex of 6, co-authored 6 publications receiving 1311 citations. Previous affiliations of Wanyoung Jang include University of Texas at Austin.

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Journal ArticleDOI

Measuring Thermal and Thermoelectric Properties of One-Dimensional Nanostructures Using a Microfabricated Device

TL;DR: In this paper, a microdevice consisting of two adjacent symmetric silicon nitride membranes suspended by long silicon-nitride beams for measuring thermophysical properties of one-dimensional manostructures (nanotubes, nanowires, and mmobelts) bridging the two membranes is fabricated.
Journal ArticleDOI

Correspondence: Reply to ‘The experimental requirements for a photon thermal diode’

TL;DR: In this article, it was shown that the symmetry error is not applicable to the experiments without thermal collimation, specifically the results presented in Fig. 1a here and Fig. 2, where the graphite plate next to BB1 can convert the local equilibrium Bose-Einstein statistics fBE(T1) to a nonlocal, non-equilibrium reservoir boundary condition fNE,1(T 1,T 2), at the boundary between (BB1þ plate1) and the test section SA, as shown here in F.
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In situ observation of electrostatic and thermal manipulation of suspended graphene membranes.

TL;DR: In this paper, the morphology of suspended graphene is manipulated via electrostatic and thermal control, and it is shown that graphene adopts a parabolic profile at large gate voltages with inhomogeneous distribution of charge density and strain.
Proceedings ArticleDOI

Thermal and Thermoelectric Measurements of Low Dimensional Nanostructures

TL;DR: In this article, the authors used an improved design of the device for measuring single wall carbon nanotubes, Ge nanowires, and SnO2 nanobelts, trapped between two adjacent symmetric silicon nitride membranes of the micro device using either a wet deposition method or in-situ chemical vapor deposition.