Light modulation is an essential operation in photonics and optoelectronics. With existing and emerging technologies increasingly demanding compact, efficient, fast and broadband optical modulators, high-performance light modulation solutions are becoming indispensable. The recent realization that 2D layered materials could modulate light with superior performance has prompted intense research and significant advances, paving the way for realistic applications. In this Review, we cover the state of the art of optical modulators based on 2D materials, including graphene, transition metal dichalcogenides and black phosphorus. We discuss recent advances employing hybrid structures, such as 2D heterostructures, plasmonic structures, and silicon and fibre integrated structures. We also take a look at the future perspectives and discuss the potential of yet relatively unexplored mechanisms, such as magneto-optic and acousto-optic modulation.

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Optical modulators with 2D layered materials

Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds and are typically limited to materials with strict structure matching and processing compatibility. Van der Waals integration, in which pre-fabricated building blocks are physically assembled together through weak van der Waals interactions, offers an alternative bond-free integration strategy without lattice and processing limitations, as exemplified by two-dimensional van der Waals heterostructures. Here we review the development, challenges and opportunities of this emerging approach, generalizing it for flexible integration of diverse material systems beyond two dimensions, and discuss its potential for creating artificial heterostructures or superlattices beyond the reach of existing materials.

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Van der Waals integration before and beyond two-dimensional materials

A gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the telecom band is demonstrated with intrinsic responsivity up to 135 mA W−1 and 657 mA W−1 in 11.5-nm- and 100-nm-thick devices, respectively.

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

2D materials are the focus of an intense research effort because of their unique properties and their potential for revealing intriguing new phenomena. Phosphorene, a monolayer of black phosphorus, earned its place among the family of 2D semiconductor materials when recent results unveiled its high carrier mobility, high optical and UV absorption, and other attractive properties, which are of particular interest for optoelectronic applications. Unlike graphene, phosphorene has an anisotropic orthorhombic structure that is ductile along one of the in-plane crystal directions but stiff along the other. This results in unusual mechanical, electronic, optical and transport properties that reflect the anisotropy of the lattice. This Review summarizes the physical properties of phosphorene and highlights the recent progress made in the preparation, isolation and characterization of this material. The role of defects and doping is discussed, and phosphorene-based devices are surveyed; finally, the remaining challenges and potential applications of phosphorene are outlined. Phosphorene is a 2D material exhibiting remarkable mechanical, electronic and optical properties. In this Review, we survey fabrication techniques and discuss theoretical and experimental findings, exploring phosphorene from its fundamental properties to its implementation in devices.

Phosphorene: from theory to applications

2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750 nm. The polarization sensitivity is due to the strong intrinsic linear dichroism, which arises from the in-plane optical anisotropy of this material. In this transistor geometry, a perpendicular built-in electric field induced by gating can spatially separate the photogenerated electrons and holes in the channel, effectively reducing their recombination rate and thus enhancing the performance for linear dichroism photodetection. The use of anisotropic layered black phosphorus in polarization-sensitive photodetection might provide new functionalities in novel optical and optoelectronic device applications. The anisotropic optical properties of black phosphorus can be exploited to fabricate photodetectors with linear dichroism operating over a broad spectral range.

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

Electronic and magnetic structures of iron selenide compounds Ce2O2FeSe2 (2212*) and BaFe2Se3 (123*) are studied by the first-principles calculations. We find that while all these compounds are composed of one-dimensional (1D) Fe chain (or ladder) structures, their electronic structures are not close to be quasi-1D. The magnetic exchange couplings between two nearest-neighbor (NN) chains in 2212* and between two NN two-leg-ladders in 123* are both antiferromagnetic (AFM), which is consistent with the presence of significant third NN AFM coupling, a common feature shared in other iron-chalcogenides, FeTe (11*) and KyFe2−xSe2 (122*). In magnetic ground states, each Fe chain of 2212* is ferromagnetic and each two-leg ladder of 123* form a block-AFM structure. We suggest that all magnetic structures in iron-selenide compounds can be unified into an extended J1-J2-J3 model. Spin-wave excitations of the model are calculated and can be tested by future experiments on these two systems.

Electronic and magnetic structures of chain structured iron selenide compounds

Electronic and magnetic structures of iron selenide compounds Ce2O2FeSe2 (2212\ast) and BaFe2Se3(123\ast) are studied by the first-principles calculations. We find that while all these compounds are composed of one-dimensional (1D) Fe chain (or ladder) structures, their electronic structures are not close to be quasi-1D. The magnetic exchange couplings between two nearest-neighbor (NN) chains in 2212\ast and between two NN two-leg-ladders in 123\ast are both antiferromagnetic (AFM), which is consistent with the presence of significant third NN AFM coupling, a common feature shared in other iron-chalcogenides, FeTe (11\ast) and KyFe2-xSe2 (122\ast). In magnetic ground states, each Fe chain of 2212\ast is ferromagnetic and each two-leg ladder of 123\ast form a block-AFM structure. We suggest that all magnetic structures in iron-selenide compounds can be unified into an extended J1-J2-J3 model. Spin-wave excitations of the model are calculated and can be tested by future experiments on these two systems.

Wei Li

Papers

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction

Electronic and magnetic structures of chain structured iron selenide compounds

Electronic and Magnetic Structures of Chain Structured Iron Selenide Compounds