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Weize Xiong
Researcher at Texas Instruments
Publications - 89
Citations - 1736
Weize Xiong is an academic researcher from Texas Instruments. The author has contributed to research in topics: MOSFET & Silicon on insulator. The author has an hindex of 23, co-authored 89 publications receiving 1648 citations. Previous affiliations of Weize Xiong include Advanced Micro Devices & University of California, Davis.
Papers
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Journal ArticleDOI
Improvement of FinFET electrical characteristics by hydrogen annealing
Weize Xiong,G. Gebara,J.R. Zaman,M. Gostkowski,Billy Nguyen,G. Smith,D. Lewis,C.R. Cleavelin,Rick L. Wise,Shaofeng Yu,M. F. Pas,Tsu-Jae King,Jean-Pierre Colinge +12 more
TL;DR: In this paper, the authors used hydrogen annealing to round off the corners of the silicon fin prior to gate oxidation and smooth the surface of the fin sidewalls, resulting in a lower threshold voltage and improved drain-induced barrier lowering (DIBL) characteristics.
Journal ArticleDOI
Quantum-mechanical effects in trigate SOI MOSFETs
TL;DR: In this article, a self-consistent Poisson-Schro/spl uml/dinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm /spl times/ 2 nm.
Journal ArticleDOI
Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs
TL;DR: In this paper, the subthreshold swing and threshold voltage characteristics of multiple-gate SOI transistors have been numerically simulated and the corner inversion effect has been shown to be negligible if the devices are fully depleted devices or if the gate insulator thickness is small enough.
Journal ArticleDOI
Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs
F. El Mamouni,En Xia Zhang,Ronald D. Schrimpf,Daniel M. Fleetwood,Robert A. Reed,Sorin Cristoloveanu,Weize Xiong +6 more
TL;DR: The dependence of the subthreshold-swing degradation on fin width is reported for irradiated 100-nm-gate-length, fully depleted n-channel FinFETs in this paper.
Journal ArticleDOI
Low-temperature electron mobility in Trigate SOI MOSFETs
Jean-Pierre Colinge,Aidan J. Quinn,Liam Floyd,Gareth Redmond,John Alderman,Weize Xiong,C.R. Cleavelin,T. Schulz,Klaus Schruefer,G. Knoblinger,P. Patruno +10 more
TL;DR: In this paper, one-dimensional subband formation was found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I/sub D/(V/sub G/) characteristics.