https://iopscience.iop.org/article/10.1088/0268-1242/31/10/103001/pdf

A review of thermal processing in the subsecond range: semiconductors and beyond

Communication—CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si

Application of flash lamp annealing on nitrogen-doped amorphous indium-gallium-zinc-oxide thin film transistors

Intense visible light irradiation was applied to phosphorous-implanted polycrystalline Si thin ﬁlms on glass substrates, whichexhibited strong absorption features due to their amorphization by the application of a large implantation dose. Despite the shortpulsedurationofthevisiblelight,theuseofahigh-poweredandsubsequentlyintensiﬁedXearclampallowedforsigniﬁcantelectricalactivation even at near-ambient temperatures and above, surpassing the efﬁcacy of conventional thermal activation processes. Usinga simple optical-thermal model, theoretical predictions indicate that the instantaneous temperatures of the phosphorous-implantedSi thin ﬁlms reach approximately 680

Weon-Bum Jin

Papers

Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing