W
Wilfried Haensch
Researcher at IBM
Publications - 256
Citations - 13932
Wilfried Haensch is an academic researcher from IBM. The author has contributed to research in topics: Field-effect transistor & MOSFET. The author has an hindex of 60, co-authored 254 publications receiving 12771 citations.
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Journal ArticleDOI
Sub-10 nm carbon nanotube transistor.
Aaron D. Franklin,Mathieu Luisier,Shu-Jen Han,George S. Tulevski,Chris Breslin,Lynne Gignac,Mark Lundstrom,Wilfried Haensch +7 more
TL;DR: This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected and should ignite exciting new research into improving the purity and placement of nanotubes, as well as optimizing CNT transistor structure and integration.
Proceedings ArticleDOI
Stable SRAM cell design for the 32 nm node and beyond
Leland Chang,David M. Fried,John M. Hergenrother,Jeffrey W. Sleight,R.H. Dennard,Robert K. Montoye,Lidija Sekaric,Sharee J. McNab,Anna W. Topol,C.D. Adams,Kathryn W. Guarini,Wilfried Haensch +11 more
TL;DR: This work demonstrates the smallest 6T and full 8T-SRAM cells to date and provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling.
Journal ArticleDOI
High-performance CMOS variability in the 65-nm regime and beyond
Kerry Bernstein,David J. Frank,Anne E. Gattiker,Wilfried Haensch,Brian L. Ji,Sani R. Nassif,E. J. Nowak,D. J. Pearson,Norman J. Rohrer +8 more
TL;DR: The performance of CMOS is described and variability isn't likely to decrease, since smaller devices contain fewer atoms and consequently exhibit less self-averaging, but the situation may be improved by removing most of the doping.
Journal ArticleDOI
Silicon CMOS devices beyond scaling
Wilfried Haensch,E. J. Nowak,Robert H. Dennard,Paul M. Solomon,A. Bryant,Omer H. Dokumaci,Arvind Kumar,Xinhui Wang,Jeffrey B. Johnson,Massimo V. Fischetti +9 more
TL;DR: This paper discusses device and material options to improve device performance when conventional scaling is power-constrained, separated into three categories: improved short-channel behavior, improved current drive, and improved switching behavior.
Journal ArticleDOI
Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
TL;DR: It is shown that aligned arrays of semiconducting carbon nanotubes can be assembled using the Langmuir-Schaefer method, and the intrinsic mobility of the nanotube is preserved after array assembly.