W
William Liu
Researcher at Stanford University
Publications - 26
Citations - 746
William Liu is an academic researcher from Stanford University. The author has contributed to research in topics: Bipolar junction transistor & Heterojunction bipolar transistor. The author has an hindex of 11, co-authored 26 publications receiving 741 citations.
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Book ChapterDOI
A framework for ontology evolution in collaborative environments
TL;DR: In this paper, the authors present different scenarios for ontology maintenance and evolution that they have encountered in their own projects and in those of their collaborators, and discuss the high-level tasks that an editing environment must support.
Journal ArticleDOI
Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit
TL;DR: In this paper, a direct technique for determining the small-signal equivalent circuit of a heterojunction bipolar transistor (HBT) is described, where the parasitic elements are largely determined from measurements of test structures.
Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transis tor Small- S ig nal Equivalent Circuit
TL;DR: In this paper, a technique for determining the small-signal equivalent-circuit model of an AIGaAs/GaAs heterojunction bipolar transistor (HBT) is presented.
Journal ArticleDOI
Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor
TL;DR: An analytical solution for the minority carrier concentration to the 2-D diffusion equation in the base of a mesa-structure bipolar transistor is derived in this paper, which is especially applicable for AlGaAs/GaAs heterojunction bipolar transistors for which the extrinsic base surface has a high surface recombination velocity if the surface is not passivated.
Journal ArticleDOI
Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistors
TL;DR: In this article, the relative importance of the base bulk recombination current and the base-emitter junction space charge recombinations was examined for AlGaAs/GaAs HBTs with different grading schemes in the base emitter junction.