Won Mook Choi

Bio: Won Mook Choi is an academic researcher from Samsung. The author has contributed to research in topics: Graphene & Materials science. The author has an hindex of 28, co-authored 58 publications receiving 7126 citations. Previous affiliations of Won Mook Choi include University of Illinois at Urbana–Champaign & Urbana University.

Stretchable and foldable silicon integrated circuits.

Abstract: We have developed a simple approach to high-performance, stretchable, and foldable integrated circuits. The systems integrate inorganic electronic materials, including aligned arrays of nanoribbons of single crystalline silicon, with ultrathin plastic and elastomeric substrates. The designs combine multilayer neutral mechanical plane layouts and "wavy" structural configurations in silicon complementary logic gates, ring oscillators, and differential amplifiers. We performed three-dimensional analytical and computational modeling of the mechanics and the electronic behaviors of these integrated circuits. Collectively, the results represent routes to devices, such as personal health monitors and other biomedical devices, that require extreme mechanical deformations during installation/use and electronic properties approaching those of conventional systems built on brittle semiconductor wafers.

A hemispherical electronic eye camera based on compressible silicon optoelectronics

Abstract: The human eye is a remarkable imaging device, with many attractive design features. Prominent among these is a hemispherical detector geometry, similar to that found in many other biological systems, that enables a wide field of view and low aberrations with simple, few-component imaging optics. This type of configuration is extremely difficult to achieve using established optoelectronics technologies, owing to the intrinsically planar nature of the patterning, deposition, etching, materials growth and doping methods that exist for fabricating such systems. Here we report strategies that avoid these limitations, and implement them to yield high-performance, hemispherical electronic eye cameras based on single-crystalline silicon. The approach uses wafer-scale optoelectronics formed in unusual, two-dimensionally compressible configurations and elastomeric transfer elements capable of transforming the planar layouts in which the systems are initially fabricated into hemispherical geometries for their final implementation. In a general sense, these methods, taken together with our theoretical analyses of their associated mechanics, provide practical routes for integrating well-developed planar device technologies onto the surfaces of complex curvilinear objects, suitable for diverse applications that cannot be addressed by conventional means.

Controlled buckling of semiconductor nanoribbons for stretchable electronics

Abstract: Control over the composition, shape, spatial location and/or geometrical configuration of semiconductor nanostructures is important for nearly all applications of these materials. Here we report a mechanical strategy for creating certain classes of three-dimensional shapes in nanoribbons that would be difficult to generate in other ways. This approach involves the combined use of lithographically patterned surface chemistry to provide spatial control over adhesion sites, and elastic deformations of a supporting substrate to induce well-controlled local displacements. We show that precisely engineered buckling geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations can be described quantitatively with analytical models of the mechanics. As one application example, we show that some of these structures provide a route to electronics (and optoelectronics) with extremely high levels of stretchability (up to approximately 100%), compressibility (up to approximately 25%) and bendability (with curvature radius down to approximately 5 mm).

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

Abstract: Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Biaxially Stretchable "Wavy" Silicon Nanomembranes

Abstract: This Letter introduces a biaxially stretchable form of single crystalline silicon that consists of two dimensionally buckled, or "wavy", silicon nanomembranes on elastomeric supports. Fabrication procedures for these structures are described, and various aspects of their geometries and responses to uniaxial and biaxial strains along various directions are presented. Analytical models of the mechanics of these systems provide a framework for quantitatively understanding their behavior. These classes of materials might be interesting as a route to high-performance electronics with full, two-dimensional stretchability.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Large-scale pattern growth of graphene films for stretchable transparent electrodes

Abstract: Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistance of approximately 280 Omega per square, with approximately 80 per cent optical transparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700 cm(2) V(-1) s(-1) and exhibit the half-integer quantum Hall effect, implying that the quality of graphene grown by chemical vapour deposition is as high as mechanically cleaved graphene. Employing the outstanding mechanical properties of graphene, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics.

Roll-to-roll production of 30-inch graphene films for transparent electrodes

Abstract: The outstanding electrical, mechanical and chemical properties of graphene make it attractive for applications in flexible electronics. However, efforts to make transparent conducting films from graphene have been hampered by the lack of efficient methods for the synthesis, transfer and doping of graphene at the scale and quality required for applications. Here, we report the roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates. The films have sheet resistances as low as approximately 125 ohms square(-1) with 97.4% optical transmittance, and exhibit the half-integer quantum Hall effect, indicating their high quality. We further use layer-by-layer stacking to fabricate a doped four-layer film and measure its sheet resistance at values as low as approximately 30 ohms square(-1) at approximately 90% transparency, which is superior to commercial transparent electrodes such as indium tin oxides. Graphene electrodes were incorporated into a fully functional touch-screen panel device capable of withstanding high strain.

Materials and mechanics for stretchable electronics

Abstract: Recent advances in mechanics and materials provide routes to integrated circuits that can offer the electrical properties of conventional, rigid wafer-based technologies but with the ability to be stretched, compressed, twisted, bent, and deformed into arbitrary shapes. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated with elastomeric substrates, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we review these strategies and describe applications of them in systems ranging from electronic eyeball cameras to deformable light-emitting displays. We conclude with some perspectives on routes to commercialization, new device opportunities, and remaining challenges for research.