Author
Woongje Sung
Other affiliations: North Carolina State University, Korea University, Samsung
Bio: Woongje Sung is an academic researcher from State University of New York System. The author has contributed to research in topics: MOSFET & Diode. The author has an hindex of 16, co-authored 54 publications receiving 933 citations. Previous affiliations of Woongje Sung include North Carolina State University & Korea University.
Topics: MOSFET, Diode, Breakdown voltage, Schottky diode, JFET
Papers published on a yearly basis
Papers
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TL;DR: Development of 15-kV SiC IGBTs and their impact on utility applications is discussed, and the need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing.
Abstract: The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially for advanced power conversion and military applications, and hence the size and weight of the power electronic system are reduced. Development of 15-kV SiC IGBTs and their impact on utility applications is discussed.
252 citations
01 Jan 2011
TL;DR: In this paper, a new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC.
Abstract: A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.
99 citations
TL;DR: In this article, a new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC.
Abstract: A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.
87 citations
TL;DR: In this paper, the authors reported a new 900 V 4H-SiC JBSFET with an integrated JBS diode in the center area of the chip, which resulted in 30% reduction in SiC wafer area consumption in case of 10 A rating device.
Abstract: This letter reports a new 900 V 4H-SiC JBSFET containing an MOSFET with an integrated JBS diode in the center area of the chip. Both MOSFET and JBS diode structures utilize the same edge termination structure,which results in 30% reduction in SiC wafer area consumption in case of 10 A rating device. In order to form a Schottky contact for the JBS diode as well as ohmic contacts for n+ source and p+ body of the MOSFET,a simple metal process flow has been newly developed. It was found that Ni can simultaneously form ohmic contacts on n+ and p+ implanted regions while it remains a Schottky contact on the n-epitaxial drift layer when it is annealed at moderate temperature (900°C for 2 min). The proposed JBSFET was successfully fabricated using a nine-mask on 6-in 4H-SiC wafers.
87 citations
TL;DR: In this article, a hybrid junction termination extension (Hybrid-JTE) was proposed, which combines ring-assisted JTE and multiple floating zone JTE, and the measured breakdown voltage of the fabricated p-i-n diode using the hybrid JTE is as high as 5450 V.
Abstract: This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE Based on the parameters of the drift layer specified by the wafer vendor, the measured breakdown voltage of the fabricated p-i-n diode using the Hybrid-JTE is as high as 5450 V, which is close (~99%) of the ideal parallel plane p-n junction Furthermore, measured breakdown voltages from randomly chosen 32 p-i-n diodes across the wafer show very tight distribution: 29 diodes provide breakdown voltages higher than 5000 V at $100~\mu \text{A}$
60 citations
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TL;DR: This paper first presents a brief overview of well-established multilevel converters strongly oriented to their current state in industrial applications to then center the discussion on the new converters that have made their way into the industry.
Abstract: Multilevel converters have been under research and development for more than three decades and have found successful industrial application. However, this is still a technology under development, and many new contributions and new commercial topologies have been reported in the last few years. The aim of this paper is to group and review these recent contributions, in order to establish the current state of the art and trends of the technology, to provide readers with a comprehensive and insightful review of where multilevel converter technology stands and is heading. This paper first presents a brief overview of well-established multilevel converters strongly oriented to their current state in industrial applications to then center the discussion on the new converters that have made their way into the industry. In addition, new promising topologies are discussed. Recent advances made in modulation and control of multilevel converters are also addressed. A great part of this paper is devoted to show nontraditional applications powered by multilevel converters and how multilevel converters are becoming an enabling technology in many industrial sectors. Finally, some future trends and challenges in the further development of this technology are discussed to motivate future contributions that address open problems and explore new possibilities.
3,415 citations
TL;DR: In this article, the authors discuss about integrating renewable energy sources into the smart power grid through industrial electronics, including photovoltaic power, wind energy conversion, hybrid energy systems, and tidal energy conversion.
Abstract: This paper discusses about integrating renewable energy sources into the smart power grid through industrial electronics. This paper discusses photovoltaic power, wind energy conversion, hybrid energy systems, and tidal energy conversion.
933 citations
TL;DR: In this article, the authors present a systematical technology review essential for the development and application of SST in the distribution system, including high-voltage power devices, high-power and high-frequency transformers, ac/ac converter topologies, and future research directions.
Abstract: The solid-state transformer (SST), which has been regarded as one of the 10 most emerging technologies by Massachusetts Institute of Technology (MIT) Technology Review in 2010, has gained increasing importance in the future power distribution system. This paper presents a systematical technology review essential for the development and application of SST in the distribution system. The state-of-the-art technologies of four critical areas are reviewed, including high-voltage power devices, high-power and high-frequency transformers, ac/ac converter topologies, and applications of SST in the distribution system. In addition, future research directions are presented. It is concluded that the SST is an emerging technology for the future distribution system.
897 citations
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Abstract: Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
806 citations