Wyatt K. Metzger

Bio: Wyatt K. Metzger is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Cadmium telluride photovoltaics & Carrier lifetime. The author has an hindex of 40, co-authored 187 publications receiving 7362 citations. Previous affiliations of Wyatt K. Metzger include General Electric & First Solar.

Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin‐film solar cells

Abstract: We report the growth and characterization of record-efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells. Conversion efficiencies exceeding 19% have been achieved for the first time, and this result indicates that the 20% goal is within reach. Details of the experimental procedures are provided, and material and device characterization data are presented. Published in 2003 by John Wiley & Sons, Ltd.

Multiple Exciton Generation in Colloidal Silicon Nanocrystals

Abstract: Multiple exciton generation (MEG) is a process whereby multiple electron-hole pairs, or excitons, are produced upon absorption of a single photon in semiconductor nanocrystals (NCs) and represents a promising route to increased solar conversion efficiencies in single-junction photovoltaic cells. We report for the first time MEG yields in colloidal Si NCs using ultrafast transient absorption spectroscopy. We find the threshold photon energy for MEG in 9.5 nm diameter Si NCs (effective band gap E g ) 1.20 eV) to be 2.4 ± 0.1Eg and find an excitonproduction quantum yield of 2.6 ± 0.2 excitons per absorbed photon at 3.4Eg. While MEG has been previously reported in direct-gap semiconductor NCs of PbSe, PbS, PbTe, CdSe, and InAs, this represents the first report of MEG within indirect-gap semiconductor NCs. Furthermore, MEG is found in relatively large Si NCs (diameter equal to about twice the Bohr radius) such that the confinement energy is not large enough to produce a large blue-shift of the band gap (only 80 meV), but the Coulomb interaction is sufficiently enhanced to produce efficient MEG. Our findings are of particular importance because Si dominates the photovoltaic solar cell industry, presents no problems regarding abundance and accessibility within the Earth’s crust, and poses no significant environmental problems regarding toxicity.

Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

Abstract: High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1−xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edge...

CdTe solar cells with open-circuit voltage breaking the 1 V barrier

Abstract: CdTe solar cells have the potential to undercut the costs of electricity generated by other technologies, if the open-circuit voltage can be increased beyond 1 V without significant decreases in current. However, in the past decades, the open-circuit voltage has stagnated at around 800–900 mV. This is lower than in GaAs solar cells, even though GaAs has a smaller bandgap; this is because it is more difficult to achieve simultaneously high hole density and lifetime in II–VI materials than in III–V materials. Here, by doping the CdTe with a Group V element, we report lifetimes in single-crystal CdTe that are nearly radiatively limited and comparable to those in GaAs over a hole density range relevant for solar applications. Furthermore, the deposition on CdTe of nanocrystalline CdS layers that form non-ideal heterointerfaces with 10% lattice mismatch impart no damage to the CdTe surface and show excellent junction transport properties. These results enable the fabrication of CdTe solar cells with open-circuit voltage greater than 1 V. Solar cells based on CdTe are a promising low-cost alternative to mainstream Si devices, but they usually produce voltages below 900 mV. Burst et al. now show that open-circuit voltages greater than 1 V can be achieved by doping the CdTe with a group V element.

Terawatt-scale photovoltaics: Transform global energy

Abstract: Solar energy has the potential to play a central role in the future global energy system because of the scale of the solar resource, its predictability, and its ubiquitous nature. Global installed solar photovoltaic (PV) capacity exceeded 500 GW at the end of 2018, and an estimated additional 500 GW of PV capacity is projected to be installed by 2022–2023, bringing us into the era of TW-scale PV. Given the speed of change in the PV industry, both in terms of continued dramatic cost decreases and manufacturing-scale increases, the growth toward TW-scale PV has caught many observers, including many of us (1), by surprise. Two years ago, we focused on the challenges of achieving 3 to 10 TW of PV by 2030. Here, we envision a future with ∼10 TW of PV by 2030 and 30 to 70 TW by 2050, providing a majority of global energy. PV would be not just a key contributor to electricity generation but also a central contributor to all segments of the global energy system. We discuss ramifications and challenges for complementary technologies (e.g., energy storage, power to gas/liquid fuels/chemicals, grid integration, and multiple sector electrification) and summarize what is needed in research in PV performance, reliability, manufacturing, and recycling.

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

Metal-halide perovskites for photovoltaic and light-emitting devices

Abstract: Metal-halide perovskites are crystalline materials originally developed out of scientific curiosity. Unexpectedly, solar cells incorporating these perovskites are rapidly emerging as serious contenders to rival the leading photovoltaic technologies. Power conversion efficiencies have jumped from 3% to over 20% in just four years of academic research. Here, we review the rapid progress in perovskite solar cells, as well as their promising use in light-emitting devices. In particular, we describe the broad tunability and fabrication methods of these materials, the current understanding of the operation of state-of-the-art solar cells and we highlight the properties that have delivered light-emitting diodes and lasers. We discuss key thermal and operational stability challenges facing perovskites, and give an outlook of future research avenues that might bring perovskite technology to commercialization.

19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

Abstract: We report a new record total-area efficiency of 19·9% for CuInGaSe2-based thin-film solar cells. Improved performance is due to higher fill factor. The device was made by three-stage co-evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.

Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells

Abstract: A device physics model has been developed for radial p-n junction nanorod solar cells, in which densely packed nanorods, each having a p-n junction in the radial direction, are oriented with the rod axis parallel to the incident light direction. High-aspect-ratio (length/diameter) nanorods allow the use of a sufficient thickness of material to obtain good optical absorption while simultaneously providing short collection lengths for excited carriers in a direction normal to the light absorption. The short collection lengths facilitate the efficient collection of photogenerated carriers in materials with low minority-carrier diffusion lengths. The modeling indicates that the design of the radial p-n junction nanorod device should provide large improvements in efficiency relative to a conventional planar geometry p-n junction solar cell, provided that two conditions are satisfied: (1) In a planar solar cell made from the same absorber material, the diffusion length of minority carriers must be too low to allow for extraction of most of the light-generated carriers in the absorber thickness needed to obtain full light absorption. (2) The rate of carrier recombination in the depletion region must not be too large (for silicon this means that the carrier lifetimes in the depletion region must be longer than ~10 ns). If only condition (1) is satisfied, the modeling indicates that the radial cell design will offer only modest improvements in efficiency relative to a conventional planar cell design. Application to Si and GaAs nanorod solar cells is also discussed in detail.

Enhancing solar cell efficiency: the search for luminescent materials as spectral converters

Abstract: Photovoltaic (PV) technologies for solar energy conversion represent promising routes to green and renewable energy generation. Despite relevant PV technologies being available for more than half a century, the production of solar energy remains costly, largely owing to low power conversion efficiencies of solar cells. The main difficulty in improving the efficiency of PV energy conversion lies in the spectral mismatch between the energy distribution of photons in the incident solar spectrum and the bandgap of a semiconductor material. In recent years, luminescent materials, which are capable of converting a broad spectrum of light into photons of a particular wavelength, have been synthesized and used to minimize the losses in the solar-cell-based energy conversion process. In this review, we will survey recent progress in the development of spectral converters, with a particular emphasis on lanthanide-based upconversion, quantum-cutting and down-shifting materials, for PV applications. In addition, we will also present technical challenges that arise in developing cost-effective high-performance solar cells based on these luminescent materials.