X
X. Jorda
Researcher at Spanish National Research Council
Publications - 23
Citations - 893
X. Jorda is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Power semiconductor device & Power module. The author has an hindex of 19, co-authored 23 publications receiving 739 citations.
Papers
More filters
Journal ArticleDOI
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
TL;DR: This work focuses on an in-deep review of the state of the art concerning the power module, identifying the electrical requirements for the modules and the power conversion topologies that will best suit future drives.
Journal ArticleDOI
SiC Schottky Diodes for Harsh Environment Space Applications
Philippe Godignon,X. Jorda,Miquel Vellvehi,Xavier Perpiñà,Viorel Banu,D. Lopez,J. Barbero,Pierre Brosselard,S. Massetti +8 more
TL;DR: The manufactured diodes demonstrated high stability for a continuous operation at 285 °C and the use of gold metallization and gold wire bonds on the anode allows reducing the diode surface and bonding degradation when compared to Al-containing technology.
Journal ArticleDOI
Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications
Luis A. Navarro,Xavier Perpiñà,Philippe Godignon,Josep Montserrat,Viorel Banu,Miquel Vellvehi,X. Jorda +6 more
TL;DR: In this paper, a comparative analysis of the thermomechanical performance of high-temperature die-attach materials (sintered nano-Ag, AuGe, and PbSnAg) under harsh thermal cycling tests is presented.
Journal ArticleDOI
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
Journal ArticleDOI
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions
Xavier Perpiñà,Jean-François Serviere,J. Urresti-Ibanez,I. Cortes,X. Jorda,Salvador Hidalgo,Jose Rebollo,Michel Mermet-Guyennet +7 more
TL;DR: Results show that mismatches in the electrothermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure and reducing the lifetime of the power module.