Xi He

Bio: Xi He is an academic researcher from Brookhaven National Laboratory. The author has contributed to research in topics: Superconductivity & Cuprate. The author has an hindex of 20, co-authored 56 publications receiving 2319 citations. Previous affiliations of Xi He include University of Nebraska–Lincoln & Yale University.

Robust isothermal electric control of exchange bias at room temperature

Abstract: Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr(2)O(3) has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr(2)O(3) single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Neel temperature.

Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics

Abstract: Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization.

Dependence of the critical temperature in overdoped copper oxides on superfluid density

Abstract: The physics of underdoped copper oxide superconductors, including the pseudogap, spin and charge ordering and their relation to superconductivity, is intensely debated. The overdoped copper oxides are perceived as simpler, with strongly correlated fermion physics evolving smoothly into the conventional Bardeen-Cooper-Schrieffer behaviour. Pioneering studies on a few overdoped samples indicated that the superfluid density was much lower than expected, but this was attributed to pair-breaking, disorder and phase separation. Here we report the way in which the magnetic penetration depth and the phase stiffness depend on temperature and doping by investigating the entire overdoped side of the La2-xSrxCuO4 phase diagram. We measured the absolute values of the magnetic penetration depth and the phase stiffness to an accuracy of one per cent in thousands of samples; the large statistics reveal clear trends and intrinsic properties. The films are homogeneous; variations in the critical superconducting temperature within a film are very small (less than one kelvin). At every level of doping the phase stiffness decreases linearly with temperature. The dependence of the zero-temperature phase stiffness on the critical superconducting temperature is generally linear, but with an offset; however, close to the origin this dependence becomes parabolic. This scaling law is incompatible with the standard Bardeen-Cooper-Schrieffer description.

Atomic-scale control of competing electronic phases in ultrathin LaNiO3

Abstract: In an effort to scale down electronic devices to atomic dimensions1, the use of transition-metal oxides may provide advantages over conventional semiconductors. Their high carrier densities and short electronic length scales are desirable for miniaturization2, while strong interactions that mediate exotic phase diagrams3 open new avenues for engineering emergent properties4,5. Nevertheless, understanding how their correlated electronic states can be manipulated at the nanoscale remains challenging. Here, we use angle-resolved photoemission spectroscopy to uncover an abrupt destruction of Fermi liquid-like quasiparticles in the correlated metal LaNiO3 when confined to a critical film thickness of two unit cells. This is accompanied by the onset of an insulating phase as measured by electrical transport. We show how this is driven by an instability to an incipient order of the underlying quantum many-body system, demonstrating the power of artificial confinement to harness control over competing phases in complex oxides with atomic-scale precision. An insulating phase abruptly emerges in LaNiO3 when its thickness is reduced to only two unit cells.

Spontaneous breaking of rotational symmetry in copper oxide superconductors

Abstract: The origin of high-temperature superconductivity in copper oxides and the nature of the 'normal' state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen-Cooper-Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La2-xSrxCuO4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an angle ϕ, the transverse voltage oscillates as sin(2ϕ), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every ϕ. The origin of this anisotropy is purely electronic-the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Abstract: Multiferroic magnetoelectric composite systems such as ferromagnetic-ferroelectric heterostructures have recently attracted an ever-increasing interest and provoked a great number of research activities, driven by profound physics from coupling between ferroelectric and magnetic orders, as well as potential applications in novel multifunctional devices, such as sensors, transducers, memories, and spintronics. In this Review, we try to summarize what remarkable progress in multiferroic magnetoelectric composite systems has been achieved in most recent few years, with emphasis on thin films; and to describe unsolved issues and new device applications which can be controlled both electrically and magnetically.

Antiferromagnetic spintronics

Abstract: Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials It also details some of the remaining bottlenecks and suggests possible avenues for future research

Advances in magnetoelectric multiferroics.

Abstract: The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic materials has driven significant research activity, with the goal of realizing their transformative technological potential. Here, we review progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and the exploration of devices and applications. Focusing on the translation of the many scientific breakthroughs into technological innovations, we identify the key open questions in the field where targeted research activities could have maximum impact in transitioning scientific discoveries into real applications. Magnetoelectric multiferroics, where magnetic properties are manipulated by electric field and vice versa, could lead to improved electronic devices. Here, advances in materials, characterisation and modelling, and usage in applications are reviewed.

Electric-field-assisted switching in magnetic tunnel junctions

Abstract: The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10(6)-10(7) A cm(-2). It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.