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Xiangfan Xu

Researcher at Tongji University

Publications -  89
Citations -  15204

Xiangfan Xu is an academic researcher from Tongji University. The author has contributed to research in topics: Thermal conductivity & Graphene. The author has an hindex of 34, co-authored 82 publications receiving 13290 citations. Previous affiliations of Xiangfan Xu include National University of Singapore & Zhejiang University.

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Roll-to-roll production of 30-inch graphene films for transparent electrodes

TL;DR: The roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates are reported, showing high quality and sheet resistances superior to commercial transparent electrodes such as indium tin oxides.
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Graphene for Controlled and Accelerated Osteogenic Differentiation of Human Mesenchymal Stem Cells

TL;DR: It is shown that graphene provides a promising biocompatible scaffold that does not hamper the proliferation of human mesenchymal stem cells and accelerates their specific differentiation into bone cells, demonstrating graphene's potential for stem cell research.
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Length-dependent thermal conductivity in suspended single-layer graphene.

TL;DR: Interestingly and in contrast to bulk materials, at 300 K, thermal conductivity keeps increasing and remains logarithmically divergent with sample length even for sample lengths much larger than the average phonon mean free path, which provides fundamental understanding of thermal transport in two-dimensional materials.
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Electrochemical Delamination of CVD-Grown Graphene Film: Toward the Recyclable Use of Copper Catalyst

TL;DR: This work demonstrates a highly efficient, nondestructive electrochemical route for the delamination of CVD graphene film from metal surfaces, which affords the advantages of high efficiency, low-cost recyclability, and minimal use of etching chemicals.
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Thorium-doping–induced superconductivity up to 56 K in Gd1−xThxFeAsO

TL;DR: In this article, instead of F- substitution for O2-, the authors employed Th4+ doping in GdFeAsO with the consideration of "lattice match" between Gd2O2 layers and Fe2As2 ones.