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Xiao-Hong Zhang
Researcher at Georgia Institute of Technology
Publications - 22
Citations - 1522
Xiao-Hong Zhang is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Field-effect transistor & Electron mobility. The author has an hindex of 16, co-authored 22 publications receiving 1468 citations.
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Journal ArticleDOI
A spray-processable, low bandgap, and ambipolar donor-acceptor conjugated polymer.
Timothy T. Steckler,Xuan Zhang,Jungseek Hwang,Ryan Honeyager,Shino Ohira,Xiao-Hong Zhang,A. Grant,Stefan Ellinger,Susan A. Odom,Daniel Sweat,David B. Tanner,Andrew G. Rinzler,Stephen Barlow,Jean-Luc Brédas,Bernard Kippelen,Seth R. Marder,John R. Reynolds +16 more
TL;DR: Combining a strong donor, tris(dodecyloxy)phenyl)-dithieno[3,2-b:2',3'-d]pyrrole, with a strong acceptor, 4,8- dithien-2-yl-2lambda(4)delta(2)-benzo, has yielded the lowest bandgap, soluble, spray-processable polymer to date.
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Copolymers of perylene diimide with dithienothiophene and dithienopyrrole as electron-transport materials for all-polymer solar cells and field-effect transistors
Xiaowei Zhan,Zhan'ao Tan,Erjun Zhou,Yongfang Li,Rajneesh Misra,A. Grant,Benoit Domercq,Xiao-Hong Zhang,Zesheng An,Xuan Zhang,Stephen Barlow,Bernard Kippelen,Seth R. Marder +12 more
TL;DR: In this article, a solution-processable conjugated polymers consisting of perylene diimide moieties alternating with dithienothiophene, oligo(dithien-thiophene), or N-dodecyl dithiamidyl-Dithienopyrrole units have been synthesized.
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Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
TL;DR: In this article, a lowvoltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer are presented.
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A comprehensive study of short channel effects in organic field-effect transistors
TL;DR: In this paper, the authors present a comprehensive study of short channel effects in organic field-effect transistors by measuring the electrical characteristics of devices with fixed channel width and varying channel length, and show that drain-source currents from transistors with a channel length of 50μm show excellent agreement with the square law equations derived for crystalline Si MOSFETs in both the linear and saturation regimes.
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High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
Xiao-Hong Zhang,Benoit Domercq,Xudong Wang,Seunghyup Yoo,Takeshi Kondo,Zhong Lin Wang,Bernard Kippelen +6 more
TL;DR: In this article, high performance pentacene field effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD).