Author
Xiao-Jian She
Bio: Xiao-Jian She is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Non-volatile memory & Pentacene. The author has an hindex of 10, co-authored 10 publications receiving 239 citations.
Papers
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TL;DR: In this paper, a high performance organic field effect transistor nonvolatile memory based on nano-floating-gate is reported, which shows a large memory window of about 70 V, high ON/OFF ratio of reading current over 105 after 1-week storage, high field effect mobility of 0.6 cm2/V s, and good programming/erasing/reading endurance.
45 citations
TL;DR: In this paper, a pentacene-based organic field effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions.
40 citations
TL;DR: In this paper, a hybrid nano-floating-gate was proposed to increase the density of charge trapping sites, which are electrically separate from each other and suppress the stored charge leakage.
Abstract: High performance organic field-effect transistor nonvolatile memory is achieved by integrating gold nanoparticles and graphene oxide sheets as the hybrid nano-floating-gate. The device shows a large memory window of about 40 V, high ON/OFF ratio of reading current over 104, excellent programming/erasing endurance, and retention ability. The hybrid nano-floating-gate can increase the density of charge trapping sites, which are electrically separate from each other and thus suppress the stored charge leakage. The memory window is increased under illumination, and the results indicate that the photon-generated carriers facilitate the electron trapping but have almost no effect on the hole trapping.
38 citations
TL;DR: In this paper, a bilayer polymer dielectric consisting of hydrophobic thin layers on high-k polyvinylalcohol (PVA) is utilized to realize p-type and n-type lowvoltage organic field effect transistors (OFETs), which show superior mobility and operational stability compared with the devices with PVA single-layer dielectrics.
Abstract: Bilayer polymer dielectrics consisting of hydrophobic thin layers on high-k polyvinylalcohol (PVA) are utilized to realize p-type and n-type low-voltage organic field-effect transistors (OFETs), which show superior mobility and operational stability compared with the devices with PVA single-layer dielectric. The OFETs with top layers containing discrete π-groups, such as polystyrene (PS) and poly(2-vinyl naphthalene) (PVN), show stronger bias stress instability than those with π-group free polymethylmethacrylate (PMMA), and it is ascribed to slow charge trapping into the π-groups under bias stress. By integrating p-type and n-type low-voltage OFETs based on PMMA/PVA bilayer dielectric, a low-power high-stability complementary inverter is achieved.
31 citations
TL;DR: In this paper, the authors reported a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining bias stress measurements with the transfer line method.
22 citations
Cited by
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TL;DR: Bottom-gate, top-contact organic thin-film transistors with excellent static characteristics and fast unipolar ring oscillators with significant contribution of the transfer length to the relation between channel length, contact length, Contact resistance, effective mobility, and cutoff frequency are fabricated.
Abstract: Keywords: organic thin-film transistors ; contact length ; contact resistance ; cutoff frequency ; Thin-Film Transistors ; Field-Effect Transistors ; Artificial Skin ; Performance ; Fabrication ; Dielectrics ; Matrix Reference EPFL-ARTICLE-175161doi:10.1002/smll.201101677View record in Web of Science Record created on 2012-02-23, modified on 2017-05-12
222 citations
TL;DR: This review focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic applications in the past 10 years, and introduces organic semiconductors (OSCs), followed by their applications in various device configurations and their mechanisms.
Abstract: Flexible electronic devices have attracted a great deal of attention in recent years due to their flexibility, reduced complexity and lightweight. Such devices can conformably attach themselves to any bendable surface and can possess diverse transduction mechanisms. Consequently, with continued emphasis on innovation and development, major technological breakthroughs have been achieved in this area. This review focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic applications in the past 10 years. In addition, to the above mentioned features, OFETs have multiple advantages such as low-cost, readout integration, large-area coverage, and power efficiency, which yield synergy. To begin with, we have introduced organic semiconductors (OSCs), followed by their applications in various device configurations and their mechanisms. Later, the use of OFETs in flexible sensor applications is detailed with multiple examples. Special attention is paid to discussing the effects induced on physical parameters of OFETs with respect to variations in external stimuli. The final section provides an outlook on the mechanical aspects of OSCs, activation and revival processes of sensory layers, small area analysis, and pattern recognition techniques for electronic devices.
195 citations
174 citations
TL;DR: This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.
Abstract: Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today’s microelectronics. Interface engineering pr...
170 citations
01 Mar 2019
137 citations