Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.

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Complex thermoelectric materials.

Graphene’s success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in...

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Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

Topological photonics is a rapidly emerging field of research in which geometrical and topological ideas are exploited to design and control the behavior of light. Drawing inspiration from the discovery of the quantum Hall effects and topological insulators in condensed matter, recent advances have shown how to engineer analogous effects also for photons, leading to remarkable phenomena such as the robust unidirectional propagation of light, which hold great promise for applications. Thanks to the flexibility and diversity of photonics systems, this field is also opening up new opportunities to realize exotic topological models and to probe and exploit topological effects in new ways. This article reviews experimental and theoretical developments in topological photonics across a wide range of experimental platforms, including photonic crystals, waveguides, metamaterials, cavities, optomechanics, silicon photonics, and circuit QED. A discussion of how changing the dimensionality and symmetries of photonics systems has allowed for the realization of different topological phases is offered, and progress in understanding the interplay of topology with non-Hermitian effects, such as dissipation, is reviewed. As an exciting perspective, topological photonics can be combined with optical nonlinearities, leading toward new collective phenomena and novel strongly correlated states of light, such as an analog of the fractional quantum Hall effect.

Topological Photonics

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

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Nanoscale thermal transport

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.

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Ge-on-Si laser operating at room temperature.

The acoustic analogue of a topological insulator is shown: a metamaterial exhibiting one-way sound transport along its edge. The system — a graphene-like array of stainless-steel rods — is a promising new platform for exploring topological phenomena.

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Acoustic topological insulator and robust one-way sound transport

We analyze the optical gain of tensile-strained, n-type Ge material for Si-compatible laser applications. The band structure of unstrained Ge exhibits indirect conduction band valleys (L) lower than the direct valley (Γ) by 136 meV. Adequate strain and n-type doping engineering can effectively provide population inversion in the direct bandgap of Ge. The tensile strain decreases the difference between the L valleys and the Γ valley, while the extrinsic electrons from n-type doping fill the L valleys to the level of the Γ valley to compensate for the remaining energy difference. Our modeling shows that with a combination of 0.25% tensile strain and an extrinsic electron density of 7.6×1019/cm3 by n-type doping, a net material gain of ~400 cm-1 can be obtained from the direct gap transition of Ge despite of the free carrier absorption loss. The threshold current density for lasing is estimated to be ~6kA cm-2 for a typical edge-emitting double heterojunction structure. These results indicate that tensile strained n-type Ge is a good candidate for Si integrated lasers.

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

Well-aligned arrays of ZnO nanoneedles were fabricated using a simple vapor phase growth. The diameters of the nanoneedle tips are as small as several nanometers, which is highly in favor of the field emission. Field-emission measurements using the nanoneedle arrays as cathode showed emission current density as high as 2.4 mA/cm2 under the field of 7 V/μm, and a very low turn-on field of 2.4 V/μm. Such a high emission current density is attributed to the high aspect ratio of the nanoneedles. The high emission current density, high stability, and low turn-on field make the ZnO nanoneedle arrays one of the promising candidates for field-emission displays.

Xiaochen Sun

Papers

Ge-on-Si laser operating at room temperature.

Acoustic topological insulator and robust one-way sound transport

Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

Efficient field emission from ZnO nanoneedle arrays