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Xiaohang Li
Researcher at King Abdullah University of Science and Technology
Publications - 196
Citations - 3665
Xiaohang Li is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 29, co-authored 160 publications receiving 2884 citations. Previous affiliations of Xiaohang Li include Georgia Institute of Technology & Lehigh University.
Papers
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Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios
TL;DR: In this article, fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various aspect ratios were performed on the III-nitride light-emitting diodes (LEDs).
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Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Hongping Zhao,Guangyu Liu,Xiaohang Li,G. S. Huang,Jonathan D. Poplawsky,S. Tafon Penn,Volkmar Dierolf,Nelson Tansu +7 more
TL;DR: In this article, a three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing a graded growth-temperature profile.
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Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array
TL;DR: In this article, defective hexagonal-closed-packed gratings for light extraction were used to obtain broad band lambertian emitters with an improvement in current and power efficiencies by a factor of 1.7 and 1.9, respectively.
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III-Nitride Photonics
TL;DR: The progress in III-Nitride photonics research in 2009 is reviewed in this article, where several new research areas related to terahertz photonics, intersubband quantum wells, nanostructures, and other devices are discussed.
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HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD
Haiding Sun,Kuang-Hui Li,C. G. Torres Castanedo,Serdal Okur,Gary S. Tompa,Tom Salagaj,Sergei Lopatin,Alessandro Genovese,Xiaohang Li +8 more
TL;DR: In this paper, a 3-fold increase in the growth rate of pure β-Ga2O3 was achieved by tuning the flow rate of HCl along with other precursors in an MOCVD reactor.