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Xiaoyin Xiao
Researcher at Sandia National Laboratories
Publications - 50
Citations - 4256
Xiaoyin Xiao is an academic researcher from Sandia National Laboratories. The author has contributed to research in topics: Graphene & Conductance. The author has an hindex of 25, co-authored 49 publications receiving 3916 citations. Previous affiliations of Xiaoyin Xiao include University of Texas System & University of Texas at Austin.
Papers
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Journal ArticleDOI
Observing single nanoparticle collisions at an ultramicroelectrode by electrocatalytic amplification.
Xiaoyin Xiao,Allen J. Bard +1 more
TL;DR: Applications to studying heterogeneous kinetics at single nanoparticles, determining particle size distributions, and as a very sensitive electroanalytical technique are suggested.
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Measurement of Single Molecule Conductance: Benzenedithiol and Benzenedimethanethiol
TL;DR: In this paper, the electron transport properties of benzenedithiol and benzenedimethanethiol covalently bonded to gold electrodes by repeatedly creating a large number of molecular junctions were studied.
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Current transients in single nanoparticle collision events.
TL;DR: The study of single NP collisions allows one to screen particle size distributions and estimate NP concentrations and diffusion coefficients and indicates that the collision of NPs at the detector electrodes occurs in a statistically random manner, with the average frequency a function of particle concentration and diffusion coefficient.
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Measurements of Single-Molecule Electromechanical Properties
TL;DR: The electromechanical properties of a single molecule covalently attached to two gold electrodes are studied by simultaneously measuring the conductance and the force during the stretching of the molecule.
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Large gate modulation in the current of a room temperature single molecule transistor.
TL;DR: A single molecule field effect transistor (FET) which consists of a redox molecule covalently bonded to a source and drain electrode and an electrochemical gate is demonstrated, in the fashion of an n-type FET.