Xiaoyong Liang

TL;DR: This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots.

TL;DR: In this paper, a simple passivation method based on ethanedithiol (EDT) treatment is demonstrated, which effectively removes the surface defects of the ZnO nanocrystal films by forming zinc ethaned-ithiolates.

TL;DR: In this paper, a method to deposit NiOx thin films by employing combustion reactions was reported and a low processing temperature of 175 °C was demonstrated, and the resulting NiOx films exhibit high work functions.

TL;DR: This review will spur new material design and simulate new chemistry for colloidal oxide nanocrystals, leading to charge transporting layers and solution-processed optoelectronic devices beyond the state-of-the-art.

Abstract: Transition metal oxides are widely used in solution-processed optoelectronic devices as charge-transporting interlayers to improve contact properties and device performances. Here we show that the work function of oxide nanocrystal thin films, one of the most important parameters for charge-transporting interlayers, is readily tuned by rational design of material synthesis. Mechanism studies reveal that the combination of employing the reverse-injection approach and using zinc stearate and indium 2-ethylhexanoate as the cationic precursors ensures both controlled reaction pathways and balanced relative dopant-host precursor reactivity and hence high-quality indium doped zinc oxide nanocrystals. We find that the empirical rule of relative Lewis acidity fails to predict the relative reactivity of the cationic precursors and quantitative measurements are obligatory. The successful incorporation of indium dopants into host oxide nanocrystals accompanied by the generation of high density of free electrons lead...