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Xin-Ping Qu
Researcher at Fudan University
Publications - 232
Citations - 2881
Xin-Ping Qu is an academic researcher from Fudan University. The author has contributed to research in topics: Diffusion barrier & Schottky barrier. The author has an hindex of 23, co-authored 228 publications receiving 2576 citations. Previous affiliations of Xin-Ping Qu include Ghent University & Chinese Academy of Sciences.
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Journal ArticleDOI
Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
Shiyang Zhu,R. L. Van Meirhaeghe,Christophe Detavernier,Felix Cardon,Guo-Ping Ru,Xin-Ping Qu,Bing-Zong Li +6 more
TL;DR: In this article, the forward currentvoltage characteristics of epitaxial CoSi 2 contacts grown by Ti-interlayer mediated epitaxy (TIME) scheme on n-type Si substrates of both (100) and (111) orientations are studied in the temperature range from 80 to 300 k.
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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O
Qi Xie,Yu-Long Jiang,Christophe Detavernier,Davy Deduytsche,Roland L. Van Meirhaeghe,Guo-Ping Ru,Bing-Zong Li,Xin-Ping Qu +7 more
TL;DR: In this paper, an energetic model was proposed to explain the different growth behaviors with different precursors and density functional theory (DFT) calculation was made to find the intermediate product stability.
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Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Qi Xie,Shaoren Deng,Marc Schaekers,Dennis Lin,Matty Caymax,Annelies Delabie,Xin-Ping Qu,Yu-Long Jiang,Davy Deduytsche,Christophe Detavernier +9 more
TL;DR: In this article, a review of the most commonly used germanium surface passivation methods (e.g., epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics is presented.
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Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
Qi Xie,Jan Musschoot,Davy Deduytsche,Roland L. Van Meirhaeghe,Christophe Detavernier,Sven Van den Berghe,Yu-Long Jiang,Guo-Ping Ru,Bing-Zong Li,Xin-Ping Qu +9 more
TL;DR: In this article, the growth kinetics, chemical composition, and crystallization behavior of the TiO2 films were compared for combinations of the two precursors with three different sources of oxygen thermal ALD using H2O and plasma-enhanced ALD PEALD using H 2 Oo r O 2 plasma.
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Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization
TL;DR: In this article, the properties of ultrathin ruthenium (∼ 5nm)∕TaN(∼5nm) bilayer as the copper diffusion barrier are studied.