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Xinran Wang
Researcher at Nanjing University
Publications - 237
Citations - 30015
Xinran Wang is an academic researcher from Nanjing University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 62, co-authored 200 publications receiving 24898 citations. Previous affiliations of Xinran Wang include Stanford University & DuPont Central Research.
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Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
TL;DR: A chemical route to produce graphene nanoribbons with width below 10 nanometers was developed, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics.
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N-doping of graphene through electrothermal reactions with ammonia.
Xinran Wang,Xiaolin Li,Li Zhang,Youngki Yoon,Peter K. Weber,Hailiang Wang,Jing Guo,Hongjie Dai +7 more
TL;DR: An n-type graphene field-effect transistor that operates at room temperature is fabricated and confirmed the carbon-nitrogen species in graphene thermally annealed in ammonia is covalently functionalized by nitrogen species.
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Highly conducting graphene sheets and Langmuir–Blodgett films
TL;DR: It is reported that the exfoliation-reintercalation-expansion of graphite can produce high-quality single-layer graphene sheets stably suspended in organic solvents that exhibit high electrical conductance at room and cryogenic temperatures.
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Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors.
TL;DR: The sub-10 nm GNRFETs are comparable to small diameter carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.
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Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Haiyan Nan,Zilu Wang,Wenhui Wang,Zheng Liang,Yan Lu,Qian Chen,Daowei He,Ping-Heng Tan,Feng Miao,Xinran Wang,Jinlan Wang,Zhenhua Ni +11 more
TL;DR: The results provide a new route for modulating the optical properties of two-dimensional semiconductors and the strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.