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Xiufeng Han

Researcher at Chinese Academy of Sciences

Publications -  425
Citations -  9304

Xiufeng Han is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Magnetization & Magnetoresistance. The author has an hindex of 46, co-authored 417 publications receiving 7044 citations. Previous affiliations of Xiufeng Han include Lanzhou Jiaotong University & Tohoku University.

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Room-Temperature Skyrmion Shift Device for Memory Application

TL;DR: A room-temperature skyrmion shift memory device is demonstrated, where individual skyrnions are controllably generated and shifted using current-induced spin-orbit torques and electrically realize both writing and addressing of a stream of skyrMions in the device.
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Giant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure.

TL;DR: This work has demonstrated the feasibility of reversible and deterministic magnetization reversal controlled by pulsed electric fields with the assistance of a weak magnetic field, which is important for realizing strain-mediated magnetoelectric random access memories.
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Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature.

TL;DR: In this paper, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB-piezoelectric structure by electric fields without the assistance of a magnetic field through strain-mediated interaction.