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Xu Gao
Researcher at Soochow University (Suzhou)
Publications - 108
Citations - 2134
Xu Gao is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Transistor & Pentacene. The author has an hindex of 23, co-authored 87 publications receiving 1652 citations. Previous affiliations of Xu Gao include Nanjing University & National Institute for Materials Science.
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Synapse‐Like Organic Thin Film Memristors
TL;DR: Organic thin film memristors are achieved, functioning as electrically programmable and erasable analog memory with continuous and nonvolatile device states, and OTFMs are demonstrated to successfully emulate the essential synaptic functions.
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Freestanding transparent metallic network based ultrathin, foldable and designable supercapacitors
TL;DR: In this article, a freestanding, ultrathin, transparent and foldable metallic network electrode, loaded with MnO2 by electrochemical deposition, was used as a supercapacitor electrode.
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Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films
TL;DR: In this article, the effects of the electroforming polarity on the bipolar resistive switching characteristics in SrTiO3−δ thin films have been investigated, and a simple model describing the combination of bulk and the interface effect was proposed to explain the resistive switches in this material.
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Controlled synthesis and synergistic effects of graphene-supported PdAu bimetallic nanoparticles with tunable catalytic properties
Changhai Liu,Ruihua Liu,Qijun Sun,Jian-Bing Chang,Xu Gao,Yang Liu,Shuit-Tong Lee,Zhenhui Kang,Sui-Dong Wang +8 more
TL;DR: In this article, a room-temperatureionic-liquid-assisted metal sputtering is utilized to synthesize PdAu bimetallic nanoparticles on graphene with bare surface, small size, high surface density and controlled Pd-to-Au ratio.
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Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
Nobuhiko Mitoma,Shinya Aikawa,Xu Gao,Takio Kizu,Maki Shimizu,Meng-Fang Lin,Toshihide Nabatame,Kazuhito Tsukagoshi +7 more
TL;DR: In this article, a SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 ˚°C, and increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.