Xuedong Xie

Bio: Xuedong Xie is an academic researcher from Nanjing University. The author has contributed to research in topics: Monolayer & Topological insulator. The author has an hindex of 8, co-authored 16 publications receiving 542 citations.

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.

Abstract: The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices1. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices2–4. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator5–12. However, the size of 2D hBN single crystals is typically limited to less than one millimetre13–18, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates19. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20–23, to produce large single crystals. The epitaxial growth of large single-crystal hexagonal boron nitride monolayers on low-symmetry copper foils is demonstrated.

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes.

Abstract: Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.

Proton-assisted growth of ultra-flat graphene films

Abstract: Graphene films grown by chemical vapour deposition have unusual physical and chemical properties that offer promise for applications such as flexible electronics and high-frequency transistors1–10. However, wrinkles invariably form during growth because of the strong coupling to the substrate, and these limit the large-scale homogeneity of the film1–4,11,12. Here we develop a proton-assisted method of chemical vapour deposition to grow ultra-flat graphene films that are wrinkle-free. Our method of proton penetration13–17 and recombination to form hydrogen can also reduce the wrinkles formed during traditional chemical vapour deposition of graphene. Some of the wrinkles disappear entirely, owing to the decoupling of van der Waals interactions and possibly an increase in distance from the growth surface. The electronic band structure of the as-grown graphene films shows a V-shaped Dirac cone and a linear dispersion relation within the atomic plane or across an atomic step, confirming the decoupling from the substrate. The ultra-flat nature of the graphene films ensures that their surfaces are easy to clean after a wet transfer process. A robust quantum Hall effect appears even at room temperature in a device with a linewidth of 100 micrometres. Graphene films grown by proton-assisted chemical vapour deposition should largely retain their intrinsic performance, and our method should be easily generalizable to other nanomaterials for strain and doping engineering. A growth process in which protons decouple graphene from the underlying substrate greatly reduces the number of wrinkles that usually degrade large graphene films grown by chemical vapour deposition.

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Abstract: Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved photoemission spectroscopy, low-temperature transport measurements, and first-principles calculations to investigate the band structure, transport properties, and magnetism of this family of materials, as well as the evolution of their topological properties. We find that there exists an optimized MTI zone in the Mn(SbxBi(1-x))2Te4 phase diagram, which could possibly host a high-temperature QAH phase, offering a promising avenue for new device applications.

Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction

Abstract: We report a dual-color ultraviolet (UV) photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction. The device exhibits distinct dominant responses at solar blind (250 nm) and visible blind (around 330 nm) UV regions under different reverse biases. By using the energy band diagram of the structure, it is found that the bias-tunable two-color detection is originated from different valence band offset between cubic MgZnO/MgO and hexagonal MgZnO/MgO. Meanwhile, due to the large conduction band offset at the Si/MgO interface, the visible-light photoresponse from Si substrate is suppressed.

Quantum emission from hexagonal boron nitride monolayers

Abstract: We demonstrate first room temperature, and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride. Density Functional Theory calculations indicate that vacancy-related centers are a likely source of the emission.

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Abstract: The intricate interplay between non-trivial topology and magnetism in two-dimensional materials can lead to the emergence of interesting phenomena such as the quantum anomalous Hall effect. Here we investigate the quantum transport of both bulk crystal and exfoliated MnBi2Te4 flakes in a field-effect transistor geometry. For the six septuple-layer device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristics of an axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic-field range and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2, where h is Planck’s constant and e is electron charge. Our results pave the way for using even-number septuple-layer MnBi2Te4 to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems. A large longitudinal resistance and zero Hall plateau—hallmarks of an axion insulator—are found in MnBi2Te4. Moreover, a moderate magnetic field drives a quantum phase transition to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e2.

Prediction and observation of an antiferromagnetic topological insulator.

Abstract: Magnetic topological insulators are narrow-gap semiconductor materials that combine non-trivial band topology and magnetic order1. Unlike their nonmagnetic counterparts, magnetic topological insulators may have some of the surfaces gapped, which enables a number of exotic phenomena that have potential applications in spintronics1, such as the quantum anomalous Hall effect2 and chiral Majorana fermions3. So far, magnetic topological insulators have only been created by means of doping nonmagnetic topological insulators with 3d transition-metal elements; however, such an approach leads to strongly inhomogeneous magnetic4 and electronic5 properties of these materials, restricting the observation of important effects to very low temperatures2,3. An intrinsic magnetic topological insulator—a stoichiometric well ordered magnetic compound—could be an ideal solution to these problems, but no such material has been observed so far. Here we predict by ab initio calculations and further confirm using various experimental techniques the realization of an antiferromagnetic topological insulator in the layered van der Waals compound MnBi2Te4. The antiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to the combination of the time-reversal and primitive-lattice translation symmetries, giving rise to a ℤ2 topological classification; ℤ2 = 1 for MnBi2Te4, confirming its topologically nontrivial nature. Our experiments indicate that the symmetry-breaking (0001) surface of MnBi2Te4 exhibits a large bandgap in the topological surface state. We expect this property to eventually enable the observation of a number of fundamental phenomena, among them quantized magnetoelectric coupling6–8 and axion electrodynamics9,10. Other exotic phenomena could become accessible at much higher temperatures than those reached so far, such as the quantum anomalous Hall effect2 and chiral Majorana fermions3. An intrinsic antiferromagnetic topological insulator, MnBi2Te4, is theoretically predicted and then realized experimentally, with implications for the study of exotic quantum phenomena.

Promises and prospects of two-dimensional transistors

Abstract: Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.