Xuegeng Li

Bio: Xuegeng Li is an academic researcher. The author has contributed to research in topics: Nanoparticle & Baghouse. The author has an hindex of 8, co-authored 13 publications receiving 307 citations.

In situ modification of group iv nanoparticles using gas phase nanoparticle reactors

Abstract: A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

Methods and apparatus for the production of group iv nanoparticles in a flow-through plasma reactor

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

Optimized laser pyrolysis reactor and methods therefor

Abstract: An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle. The apparatus further includes a set of secondary precursor tubing assemblies passing through the bottom plate into the casing, wherein each secondary precursor tubing assembly of the set of secondary precursor tubing assemblies further includes a set of secondary precursor tubing assembly nozzles positioned orthogonally to the primary precursor tubing assembly nozzle, the set of secondary precursor tubing assembly nozzles further configured to be adjusted to a first height above primary precursor tubing assembly nozzle. The apparatus also includes a laser configured to generate a laser beam, the laser beam being substantially perpendicular to the primary precursor tubing assembly nozzle in the reaction zone, wherein the laser may be adjusted to a second height above primary precursor tubing assembly nozzle.

Group iv nanoparticles and films thereof

Abstract: A set of nanoparticles is disclosed Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration Each nanoparticle of the set of nanoparticles further having a sphericity of between about 10 and about 20; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms

A method of fabricating a densified nanoparticle thin film with a set of occluded pores

Abstract: A method of fabricating a densified nanoparticle thin film (12) with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate (10) in the chamber; and depositing a nanoparticle ink (11), including a set of Group 14 semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature (30-300 -C), for a first time period (Tl) of 5 to 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature (300-900 -C), for a second time period (T4-T3) of 5 to 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between 13.3 Pa-6.6 kPa (0.1-50 Torr), wherein the precursor gas substantially fills the set of pores (16).

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Process feed management for semiconductor substrate processing

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Method of forming insulation film by modified PEALD

Abstract: A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species

Abstract: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).

Process gas management for an inductively-coupled plasma deposition reactor

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.