Xunming Deng

Bio: Xunming Deng is an academic researcher from University of Toledo. The author has contributed to research in topics: Amorphous silicon & Solar cell. The author has an hindex of 13, co-authored 53 publications receiving 952 citations. Previous affiliations of Xunming Deng include University of Chicago & Energy Conversion Devices.

Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

Abstract: A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

Amorphous Silicon-Based Solar Cells

Abstract: Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must be consistent with the underlying chemical bonding properties of the atoms. For example, a silicon atom forms four covalent bonds to neighboring atoms arranged symmetrically about it. This “tetrahedral” configuration is perfectly maintained in the “diamond” lattice of crystal silicon.

High quality photovoltaic semiconductor material and laser ablation method of fabricating same

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10-8 and about 10-7, respectively; their density of defect states in the band gap thereof is less than about 1 x 1017 and about 2 x 1016/cm3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material. From about 3 to about 7 atomic percent fluorine is added to the germanium and/or silicon alloy material so as to provide a strong bond (as compared to hydrogen) so as to provide reduced sensitivity to Stabler/Wronski degradation. The preferred method of fabricating such improved narrow band gap materials is through a laser ablation process in which hydrogen or fluorine gas is introduced for incorporation into the germanium or silicon host matrix, thereby eliminating the reliance on the zoo of precursor species present in r.f. or microwave plasma process. The apparatus (10) employed includes an excimer laser (1) which produces pulsed UV light (2) which passes through a focusing lens (3) and a quartz window (4) in the vacuum chamber (5) and strikes a silicon or germanium target (6) which is mounted on an axle (7). A plasma zone (9) is created within which one or more heated substrates (8) are mounted.

American Society for Testing and Materials

Abstract: The American Society for Testing and Materials (ASTM) is an independent organization devoted to the development of standards.

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconducting materials for photoelectrochemical energy conversion

Abstract: To achieve a sustainable society with an energy mix primarily based on solar energy, we need methods of storing energy from sunlight as chemical fuels. Photoelectrochemical (PEC) devices offer the promise of solar fuel production through artificial photosynthesis. Although the idea of a carbon-neutral energy economy powered by such ‘artificial leaves’ is intriguing, viable PEC energy conversion on a global scale requires the development of devices that are highly efficient, stable and simple in design. In this Review, recently developed semiconductor materials for the direct conversion of light into fuels are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance as photoelectrodes in PEC cells. The processes of light absorption, charge separation and transport, and suitable energetics for energy conversion in PEC devices are emphasized. Both the advantageous and unfavourable aspects of multinary oxides, oxynitrides, chalcogenides, classic semiconductors and carbon-based semiconductors are critically considered on the basis of their experimentally demonstrated performance and predicted properties. Photoelectrochemical (PEC) devices offer the promise of efficient artificial photosynthesis. In this Review, recently developed light-harvesting materials for PEC application are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance in PEC cells.

Solar hydrogen production with nanostructured metal oxides

Abstract: The direct conversion of solar energy into hydrogen represents an attractive but challenging alternative for photo-voltaic solar cells. Several metal oxide semiconductors are able to split water into hydrogen and oxygen upon illumination, but the efficiencies are still (too) low. The operating principles of photo-electrochemical devices for water splitting, their main bottlenecks, and the various device concepts will be reviewed. Materials properties play a key role, and the advantages and pitfalls of the use of interfacial layers and dopants will be discussed. Special attention will be given to recent progress made in the synthesis of nanostructured metal oxides with high aspect ratios, such as nanowire arrays, which offers new opportunities to develop efficient photo-active materials for solar water splitting.