Author
Y. Abd Rahim
Bio: Y. Abd Rahim is an academic researcher. The author has contributed to research in topics: Electron mobility & Junction temperature. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.
Topics: Electron mobility, Junction temperature, IMPATT diode, Silicon
Papers
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01 Nov 2013
TL;DR: In this article, the effect of junction temperature on electric field and carrier mobility was analyzed for Si SDR IMPATT structure designed at D-band frequency. And the simulation showed that electric field increases while the carrier mobility decreases in higher junction temperature.
Abstract: This paper proposed a design of SDR Silicon IMPATT diode in lateral structure and analyzes the variable junction temperature analysis in Silicon IMPATT diode. The simulation on the effect of junction temperature on electric field and carrier mobility is carried out for Si SDR IMPATT structure designed at D-band frequency. Result show that electric field increases while the carrier mobility decreases in higher junction temperature.
2 citations
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9 citations
01 Jan 2015
TL;DR: In this article, the effect of light incident on the Si SDR IMPATT diode is investigated and the results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the SiO2 layer.
Abstract: Effect of light incident on the Si SDR IMPATT diode is investigated in this paper. The authors have used an IMPATT diode which is consists of p+, n+ (contact region), n-well region and p-sub region. Since the n-well region is used to be the drift region of the structure, the light is shined on the top of the layer through tiny hole created on the SiO2 layer. The results of the IV characteristics are compared to the dark current condition which no light will be supply on top of the structure. The result of the electric field and mobility in those two conditions are also observed in this paper.