Y. Budo

Bio: Y. Budo is an academic researcher. The author has contributed to research in topics: Thermal expansion & Partial pressure. The author has an hindex of 2, co-authored 2 publications receiving 91 citations.

Low-Temperature Properties of Evaporated Lead Films

Abstract: Lead films have been deposited onto room‐temperature substrates having low thermal expansion coefficients and the residual mechanical stresses present in these films have been determined as a function of film thickness and film purity. At room temperature no measurable stress (<5×107 dyn/cm2) was present in any film. At 78° and 4.2°K the stress σ was given by σ=α+β/d, where α is a constant dependent on temperature and d is the film thickness. A model involving surface pinning of dislocations predicts an equation of this form, but the experimental values for the stress were found to be appreciably larger than values calculated on the basis of bulk data. The experimental values were substantiated by superconducting critical temperature measurements on films of various thicknesses. Localized crystalline growth was observed in lead films after cooling to 4°K. The film material around these micron‐size crystals exhibiting five‐ and sixfold rotational symmetry was thinned to the point that physical holes were e...

Stress Anisotropy in Silicon Oxide Films

Abstract: The residual stress in films formed by vacuum sublimation of bulk silicon monoxide has been studied as a function of the angle of incidence of the evaporant. Using a source temperature of 1350–1400°C and a system total pressure of ∼2×10−6 Torr, a pronounced dependence of stress on angle of incidence and a distinct stress anisotropy was observed. The stress in the x direction (i.e., perpendicular to the direction of the evaporant irrespective of substrate orientation) increases from 4×108 dyn/cm2 for normal incidence to 14×108 dyn/cm2 for an incident angle of ∼50° and then decreases to 4×108 dyn/cm2 for an incident angle of 80°. The stress in the y direction (i.e., perpendicular to the x direction) is peaked at ∼30° at a value of 13×108 dyn/cm2 and then decreases to ∼0.5×108 dyn/cm2 at 80°. Films formed at normal incidence are quite stable and not susceptible to the effects of water vapor. However, films formed by depositing at grazing incident angles (>30°) are very unstable and invariably buckle and rupture when exposed to atmospheres of water vapor. Substrate temperature, film thickness, and inert residual gases were found to have little effect on the stress and stability of films deposited at an angle of incidence of 45°. When a lower source temperature (<1200°C) is used and a high partial pressure (10−4 Torr) of water vapor is present during deposition, the resulting highly oxidized films show a compressive stress (∼2×108 dyn/cm2) and very little dependence on the angle of incidence. These films are stable when exposed to higher partial pressures of water vapor.

Stresses and deformation processes in thin films on substrates

Abstract: The stresses that develop in thin films on substrates can be detrimental to the reliability of thin film electronic devices. In order to design these devices for improved mechanical reliability, an...

Thin film retardation plate by oblique deposition

Abstract: The birefringent property of obliquely deposited metal oxides was studied with a view to applying it to optical retardation plates. By finding favorable conditions to form transparent films of large retardation and low opacity, we developed homogeneous quarterwave plates with a bilayered structure 60 x 250 mm in size and ~3 microm thick on glass substrates. These retardation plates can work with a normally incident light based on form birefringence caused by the characteristic anisotropic microstructure inside the film. They showed promising optical properties which can compete with the conventional types of retardation plate.

An interface clusters mixture model for the structure of amorphous silicon monoxide (SiO)

Abstract: The present state of research on the structure of amorphous silicon monoxide (SiO) is reviewed. The black, coal-like modification of bulk SiO is studied by a combination of diffraction, microscopy, spectroscopy, and magnetometry methods. Partial radial distribution functions of SiO are obtained by X-ray, neutron and electron diffraction. Disproportionation of SiO into Si and SiO2 is verified. High resolution TEM gives an upper limit of less than 2 nm for the typical Si cluster size. The Si K-edge electron energy-loss near-edge structure (ELNES) data of SiO are interpreted in terms of the oxidation states Si4+ and Si0. X-ray photoelectron spectroscopy gives first details about possible stoichiometric inhomogeneities related to internal interfaces. The wipe-out effect in the 29Si MAS NMR signal of SiO is confirmed experimentally. The new estimation of the wipe-out radius is about 1.1 nm. First-time W-band, Q-band, and X-band ESR and SQUID measurements indicate an interfacial defect structure. Frequency distributions of atomic nearest-neighbours are derived. The interface clusters mixture model (ICM model) suggested here describes the SiO structure as a disproportionation in the initial state. The model implies clusters of silicon dioxide and clusters of silicon surrounded by a sub-oxide matrix that is comparable to the well-known thin Si/SiO2 interface and significant in the volume because of small cluster sizes.

Hillock growth in thin films

Abstract: A model for hillock growth in thin films such as those of lead and tin is developed. It is proposed that hillock growth is a form of stress relaxation in which atomic species diffuse along the film‐substrate interface to the base of the hillock. The latter extrudes out along the grain boundaries connecting it to the rest of the film. The stability and kinetics of this process are considered. Taking into account Nabarro‐Herring diffusion creep as a parallel stress relaxation mechanism observations such as an incubation period for hillock growth and the effects of film thickness on hillock density are accounted for. In addition, observations on lateral growth of hillocks and unusually tall hillocks (whiskers) are interpreted within the framework of the present model.