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Y. J. von der Meulen

Bio: Y. J. von der Meulen is an academic researcher from IBM. The author has contributed to research in topics: Ellipsometry & Thin film. The author has an hindex of 1, co-authored 1 publications receiving 95 citations.

Papers
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Journal ArticleDOI
Y. J. von der Meulen1
TL;DR: In this article, the rate of formation of very thin films thermally grown on [111] and [100] oriented silicon wafers was studied using ellipsometry to measure oxide thickness.
Abstract: The rate of formation of very thin films thermally grown on [111] and [100] oriented silicon wafers was studied using ellipsometry to measure oxide thickness. Film thicknesses from 10–300Aa were obtained by varying oxidation time, oxidation temperature (700°–1000°C), and oxygen concentration in O2‐N2 mixtures at 1 atm total pressure. The applicability of ellipsometry for such a study is discussed. Reproducibility of oxide films grown to thicknesses of 20–30Aa was approx. ±1.0Aa. Under otherwise equal conditions the oxide thickness grown differs for [100] and [111] oriented wafers. The pressure and temperature dependence of the linear rate constant, klin, show that the growth reaction is more complicated than was suggested earlier. In particular, a different pressure dependence for the two substrate orientations used indicates that several oxygen species participate in the rate determining steps.

96 citations


Cited by
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David E. Aspnes1, A. A. Studna1
TL;DR: In this paper, the pseudodielectric functions of spectroscopic ellipsometry and refractive indices were measured using the real-time capability of the spectro-optical ellipsometer.
Abstract: We report values of pseudodielectric functions $〈\ensuremath{\epsilon}〉=〈{\ensuremath{\epsilon}}_{1}〉+i〈{\ensuremath{\epsilon}}_{2}〉$ measured by spectroscopic ellipsometry and refractive indices $\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{n}=n+ik$, reflectivities $R$, and absorption coefficients $\ensuremath{\alpha}$ calculated from these data. Rather than correct ellipsometric results for the presence of overlayers, we have removed these layers as far as possible using the real-time capability of the spectroscopic ellipsometer to assess surface quality during cleaning. Our results are compared with previous data. In general, there is good agreement among optical parameters measured on smooth, clean, and undamaged samples maintained in an inert atmosphere regardless of the technique used to obtain the data. Differences among our data and previous results can generally be understood in terms of inadequate sample preparation, although results obtained by Kramers-Kronig analysis of reflectance measurements often show effects due to improper extrapolations. The present results illustrate the importance of proper sample preparation and of the capability of separately determining both ${\ensuremath{\epsilon}}_{1}$ and ${\ensuremath{\epsilon}}_{2}$ in optical measurements.

3,094 citations

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TL;DR: A detailed review of the principles governing the oxidation of metals is presented in this paper, which covers the initial stages of oxidation, oxide film formation, thick film and scale formation and oxide structure.
Abstract: A detailed review of the principles governing the oxidation of metals is presented. It covers the initial stages of oxidation, oxide film formation, thick film and scale formation and oxide structure.

322 citations

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TL;DR: In this paper, the angular-dependent XPS was used to study the attenuation of silicon with thermally-grown oxide overlayers in the thickness range 15-89 A and found attenuation lengths at 1382 eV in SiO2 and 27 plus or minus 6 A in Si.

259 citations

Journal ArticleDOI
TL;DR: A new and significantly more capable version of the process-simulation tool SUPREM III is described--SUPREM III--which incorporates process models suitable for VLSI device design, and for the first time, models multilayer structures.
Abstract: Over the past several years, the process-simulation tool SUPREM II has proven useful in the design and optimization of both bipolar and MOS technologies. This paper describes a new and significantly more capable version of the program--SUPREM III--which incorporates process models suitable for VLSI device design. This new version of the program is now generally available and should provide a powerful new tool in VLSI design. For the first time, the program models multilayer structures (up to five material layers). It also incorporates substantially upgraded diffusion, oxidation, ion implantation, and other process models. These models incorporate, where possible, recent thinking about underlying physical mechanisms. The program remains a one-dimensional simulator; extensions to two dimensions are discussed. This paper concentrates on the process models and their underlying physics; implementation issues are addressed elsewhere.

214 citations

Journal ArticleDOI
TL;DR: In this article, the concentration profiles of oxide films on Si have been studied by using ESCA and ellipsometry, and the oxide films were found to be composed mostly of stoichiometric SiO 2 with a very thin (about 0.3 nm) layer of SiO at the SiSiO 2 interface.

153 citations