Author
Y. S. Ergashov
Bio: Y. S. Ergashov is an academic researcher from Tashkent State Technical University named after Islam Karimov. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 1, co-authored 1 publications receiving 6 citations.
Topics: Ion implantation, Silicon
Papers
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TL;DR: The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O2+ ions in Si (111) with subsequent annealing are investigated in this article.
Abstract: The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O2+ ions in Si (111) with subsequent annealing are investigated. It is established that at high ion implantation doses (D ≥ 6 × 1016 cm−2), continuous homogeneous polycrystalline SiO2 films form, while at relatively low doses (D = 8 × 1015−4 × 1016 cm−2), SiO2 films with regularly arranged Si nano-areas with a density of 1010–1011 cm−2 form.
14 citations
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TL;DR: In this article, the energy-band parameters and optical properties of SiO2/Si films of different thicknesses prepared by thermal oxidation and ion bombardment were studied, and it was shown that the band gap of 30-40 A is 8.8-8.9 eV.
Abstract: The energy-band parameters and the emission and optical properties of SiO2/Si films of different thicknesses prepared by thermal oxidation and ion bombardment are studied. It is shown that the band gap E
g of the SiO2/Si film with a thickness of 30–40 A is 8.8–8.9 eV. In the transition layer, the E
g value and secondary-electron emission coefficient σm steadily decrease with increasing depth.
10 citations
TL;DR: In this paper, a SiO2/Si/CoSi 2/Si(111) heterostructure is synthesized via successive Co+-and O 2 -ion implantation into silicon followed by annealing.
Abstract: A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O
2
+
-ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.
5 citations
TL;DR: The composition and structure of nanodimensional GaAs have been studied by Auger electron spectroscopy and fast electron diffraction as discussed by the authors, and it has been found that the thickness of the ternary epitaxial layer is 10-12 nm for ion energy E 0 = 20 keV.
Abstract: The composition and structure of nanodimensional Ga1 – xNa
x
As phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
2 citations
TL;DR: In this article, the optimal modes of ion implantation (the partial oxygen pressure, the ion energy and dose, and the annealing temperature) are determined to form homogeneous MoO3/Mo films with thicknesses ranging from 30 to 100 A and with good stoichiometry.
Abstract: Nanoscale MoO3 films are obtained on the surface of a Mo single crystal by means of thermal oxidation and ion implantation. The optimal modes of ion implantation (the partial oxygen pressure, the ion energy and dose, and the annealing temperature) are determined to form homogeneous MoO3/Mo films with thicknesses ranging from 30 to 100 A and with good stoichiometry. It is established that, for low doses of oxygen ions (D ≤ 1016 cm–2), nanoscale MoO3 phases form on the Mo-crystal surface. The dependence of the degree of Mo surface coverage by MoO3 cluster phases on the ion dose is determined. Films with a thickness of ~100 A are obtained by successively implanting $${\text{O}}_{2}^{ + }$$
ions with energies of 5, 3, and 1 keV. The composition, the electronic structure, and the emission and optical properties of the nanoscale phases and MoO3 films are studied using a complex of methods (Auger- and photoelectron spectroscopy, secondary electron emission, and secondary-ion mass spectroscopy).
1 citations
TL;DR: In this paper, the most optimal modes of ion implantation are: energy of E0 = 1-5 keV, dose of D = 8 × 1016 cm-2, and an angle of ion incidence of α = 0°−10° relative to the normal.
Abstract: Mg nanofilms 1–2 nm thick are obtained on a MgO/Mg surface by bombardment with Ar+ ions. It is shown that to obtain homogeneous Mg films, the most optimal modes of ion implantation are: energy of E0 = 1–5 keV, dose of D = 8 × 1016 cm–2, and an angle of ion incidence of α = 0°–10° relative to the normal. The composition, electronic structure, and surface morphology of the obtained films are investigated. It is found that a transition layer with a thickness of ∼20–25 A, which is 4–5 times greater than the thickness of the Mg film, appears at the Mg—MgO boundary. In all cases, the structure of the Mg film is close to amorphous. An approximate energy-band diagram of the Mg/MgO system is constructed. The obtained thin Mg layers are potentially suitable for creating device structures of the metal–insulator–semiconductor (MIS) type, nanoscale contacts and barrier layers on the surface of semiconductor and dielectric films.