An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Semiconductor device, electronic device, and method of manufacturing semiconductor device

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

An electrode structure has independent pixel electrodes and connected common electrodes for a wide viewing angle liquid crystal display. The pixel electrode being a plate-shaped structure is fabricated on a lower layer above a substrate. The common electrode being a striped-shape structure is formed in an upper layer above the substrate. The common electrode may be a herringbone-shaped structure. The pixel electrodes and the common electrodes may overlay the data signal lines of the liquid crystal display. The arrangement of the electrode structure increases the effective light transmission. The electrode structure has the advantages that the tolerance for an electrostatic breakdown or residual electric charges is increased, and reproduction process is simplified.

Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes

The invention provides an electrode structure and production method of wide viewing angle LCD. The electrode structure provides an individually independent pixel structure and a wholly connected common electrode structure. The upper layer common electrode in a form of plural band structures and the lower layer pixel electrode in a form of panel structure are generated on a substrate. The upper layer common electrode structure is constructed on top of the indium-tin-oxide (ITO) and the pixel electrode and common electrode can stride across data signal lines to increase the effective transmission of light, thereby making the transparent area of LCD expand. When producing the electrode package in the invention, the substrate made by the existing model can be utilized. After every pixel electrode is taken as a panel electrode and is covered with a layer partition insulation layer, the grate ITO is used to make the structure of the connected common electrode. The electrode structure and production method of the invention have more tolerance of line cut and residual electric charge and are easier for reengineering process because the ITO is formed in the last section of the post-production.

Ya-Hsiang Tai

Papers

Liquid crystal display having stripe-shaped common electrodes formed above plate-shaped pixel electrodes

Electrode structure and production method of wide viewing angle LCD