研也 橋本

Bio: 研也 橋本 is an academic researcher. The author has an hindex of 1, co-authored 1 publications receiving 161 citations.

RF bulk acoustic wave filters for communications

Abstract: Background and History. Resonator and Filter Topologies. Baw Device Basics. Design and Fabrication of BAW Devices. FBAR Resonators and Filters. Comparison with SAW Devices. Films Deposition for BAW Devices. Characterization of BAW Devices. Monolithic Integration. System-in-Package (SiP) Integration. Index.

Quantum acoustics with superconducting qubits

Abstract: The ability to engineer and manipulate different types of quantum mechanical objects allows us to take advantage of their unique properties and create useful hybrid technologies. Thus far, complex quantum states and exquisite quantum control have been demonstrated in systems ranging from trapped ions to superconducting resonators. Recently, there have been many efforts to extend these demonstrations to the motion of complex, macroscopic objects. These mechanical objects have important applications as quantum memories or transducers for measuring and connecting different types of quantum systems. In particular, there have been a few experiments that couple motion to nonlinear quantum objects such as superconducting qubits. This opens up the possibility of creating, storing, and manipulating non-Gaussian quantum states in mechanical degrees of freedom. However, before sophisticated quantum control of mechanical motion can be achieved, we must realize systems with long coherence times while maintaining a sufficient interaction strength. These systems should be implemented in a simple and robust manner that allows for increasing complexity and scalability in the future. Here we experimentally demonstrate a high frequency bulk acoustic wave resonator that is strongly coupled to a superconducting qubit using piezoelectric transduction. In contrast to previous experiments with qubit-mechanical systems, our device requires only simple fabrication methods, extends coherence times to many microseconds, and provides controllable access to a multitude of phonon modes. We use this system to demonstrate basic quantum operations on the coupled qubit-phonon system. Straightforward improvements to the current device will allow for advanced protocols analogous to what has been shown in optical and microwave resonators, resulting in a novel resource for implementing hybrid quantum technologies.

Gallium Nitride as an Electromechanical Material

Abstract: Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular material after silicon in the semiconductor industry. The prime movers behind this trend are LEDs, microwave, and more recently, power electronics. New areas of research also include spintronics and nanoribbon transistors, which leverage some of the unique properties of GaN. GaN has electron mobility comparable with silicon, but with a bandgap that is three times larger, making it an excellent candidate for high-power applications and high-temperature operation. The ability to form thin-AlGaN/GaN heterostructures, which exhibit the 2-D electron gas phenomenon leads to high-electron mobility transistors, which exhibit high Johnson's figure of merit. Another interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN microelectromechanical systems (MEMS). To fully unlock the potential of GaN and realize new advanced all-GaN integrated circuits, it is essential to cointegrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more than Moore functional devices with GaN active electronics. Therefore, there is a growing interest in the use of GaN as a mechanical material. This paper reviews the electromechanical, thermal, acoustic, and piezoelectric properties of GaN, and describes the working principle of some of the reported high-performance GaN-based microelectromechanical components. It also provides an outlook for possible research directions in GaN MEMS.

Controlling phonons and photons at the wavelength scale: integrated photonics meets integrated phononics

Abstract: Radio-frequency communication systems have long used bulk- and surface-acoustic-wave devices supporting ultrasonic mechanical waves to manipulate and sense signals. These devices have greatly improved our ability to process microwaves by interfacing them to orders-of-magnitude slower and lower-loss mechanical fields. In parallel, long-distance communications have been dominated by low-loss infrared optical photons. As electrical signal processing and transmission approach physical limits imposed by energy dissipation, optical links are now being actively considered for mobile and cloud technologies. Thus there is a strong driver for wavelength-scale mechanical wave or “phononic” circuitry fabricated by scalable semiconductor processes. With the advent of these circuits, new micro- and nanostructures that combine electrical, optical, and mechanical elements have emerged. In these devices, such as optomechanical waveguides and resonators, optical photons and gigahertz phonons are ideally matched to one another, as both have wavelengths on the order of micrometers. The development of phononic circuits has thus emerged as a vibrant field of research pursued for optical signal processing and sensing applications as well as emerging quantum technologies. In this review, we discuss the key physics and figures of merit underpinning this field. We also summarize the state of the art in nanoscale electro- and optomechanical systems with a focus on scalable platforms such as silicon. Finally, we give perspectives on what these new systems may bring and what challenges they face in the coming years. In particular, we believe hybrid electro- and optomechanical devices incorporating highly coherent and compact mechanical elements on a chip have significant untapped potential for electro-optic modulation, quantum microwave-to-optical photon conversion, sensing, and microwave signal processing.

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Abstract: With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 25 GHz Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics The basic principles and details of recently proposed BAW resonators are carefully investigated The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators

Micromachined One-Port Aluminum Nitride Lamb Wave Resonators Utilizing the Lowest-Order Symmetric Mode

Abstract: The characteristics of one-port aluminum nitride (AlN) Lamb wave resonators utilizing the lowest-order symmetric mode with electrically open, grounded, and floating bottom electrode configurations are theoretically and experimentally investigated in this paper. Finite element analysis is performed to take an insight into the static capacitance characteristics of the AlN Lamb wave resonators with various bottom surface conditions. Without sacrificing the transduction efficiency, the floating bottom electrode is capable of reducing the static capacitance in the AlN thin plate and then promotes an efficient improvement in the effective coupling coefficient (k2eff). In addition, in comparison with the grounded bottom electrode, the employment of the floating bottom electrode offers simple fabrication processes for the micromachined Lamb wave resonators. Experimentally, the AlN Lamb wave resonators without the bottom electrode exhibit an average loaded quality factor (Q) as high as 2676 at the series resonance frequency, but a low average k2eff of 0.19%. On the contrary, the Lamb wave resonators with the electrically floating bottom electrode show the largest average k2eff up to 1.13% among the three topologies but a low average loaded Q of 800 at the series resonance frequency. In contrast to the floating bottom electrode, the Lamb wave resonators with the electrically grounded bottom electrode show a smaller average k2eff of 0.78% and a similar average loaded Q of 758 at the series resonance frequency.