Yang Yang

Bio: Yang Yang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Medicine & Computer science. The author has an hindex of 171, co-authored 2644 publications receiving 153049 citations. Previous affiliations of Yang Yang include Zhejiang University & Northwest Normal University.

Pion interferometry in Au+Au and Cu+Cu collisions at √sNN=62.4 and 200 GeV

Abstract: We present a systematic analysis of two-pion interferometry in Au+Au collisions at √sNN=62.4 GeV and Cu+Cu collisions at √sNN=62.4 and 200 GeV using the STAR detector at the Relativistic Heavy Ion Collider (RHIC). The multiplicity and transverse momentum dependences of the extracted correlation lengths (radii) are studied. The scaling with charged particle multiplicity of the apparent system volume at final interaction is studied for the RHIC energy domain. The multiplicity scaling of the measured correlation radii is found to be independent of colliding system and collision energy.

Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions

Abstract: It is well known that the light emission at ∼1.54 μm falls within the minimum loss window of silica optic fibers for optical communication and is of significance for the silicon-based optoelectronic integration. Herein, we report on erbium (Er)-related electroluminescence (EL) at ∼1.54 μm from Er-doped ZnO (ZnO:Er)/p+-Si heterostructured light-emitting devices. Such Er-related ∼1.54 μm EL can be enabled at a voltage as low as 6 V. It is derived that the Er-related ∼1.54 μm EL is triggered by transfer of the energy released from the defect-assisted indirect recombination in the ZnO host to the incorporated Er3+ ions. We believe that the present achievement paves the way for the Si-compatible ∼1.54 μm light emitters using the cost-effective oxide semiconductors as the hosts of Er3+ ions.

Dual-Band Dual Circularly Polarized Antenna Array Using FSS-Integrated Polarization Rotation AMC Ground for Vehicle Satellite Communications

Abstract: This paper presents a new dual-band dual circularly polarized (CP) high gain patch antenna array for vehicle satellite communications. The array consists of 16 linearly polarized dual-band elements backed with a new frequency-selective-surface (FSS)-integrated polarization rotation ground. The polarization rotation ground is located underneath the array, which not only acts as a reflector to increase the array boresight gain but also enables the array's dual CP radiation. The electromagnetic (EM) waves reflected by the ground retard either 90° or 270° with respect to the EM waves of the array directly radiated to the upper sphere at two frequency bands, leading to the dual-band dual CP radiation. This is totally different from many of the former counterparts which are based on either the perturbation on the stacked patch or external feeding network. Measured results show the −10-dB impedance bandwidth is from 7.8 to more than 8.5-GHz for X-band and from 14 to 15.3-GHz for Ku-band. The 3-dB axial ratio bandwidth is from 8.15 to 8.35-GHz for the lower band (right-hand CP) and from 14.2 to 14.8-GHz for the higher band (left-hand CP), respectively.

Design of a Miniaturized On-Chip Bandpass Filter Using Edge-Coupled Resonators for Millimeter-Wave Applications

Abstract: A unique miniaturization technique for on-chip passive device implemented in gallium arsenide (GaAs)-based technology is presented, which is based on edge-coupled cells (ECCs). The principle of an ECC is first studied by means of the equivalent LC circuits. Then, using the ECC as a baseline, a combination of different shorting-ground and tapping methods is fully investigated in terms of their impact on frequency responses. By directly shorting the specific edge-coupled fingers to the ground, an ECC can be converted into a resonator without increasing any physical size. To further demonstrate the feasibility of using this technique for miniaturized monolithic microwave integrated circuit design, an on-chip bandpass filter (BPF) is implemented and fabricated in a commercial 0.1- $\mu \text{m}$ GaAs technology. The measurement results show that the 3-dB bandwidth of the filter is from 21.2 to 26.5 GHz, while the insertion loss is less than 2.9 dB at 23 GHz. In addition, more than 30 dB of suppression is achieved from 0 to 15 GHz and from 44 to 54 GHz. The size of the BPF is only $ {640} \times {280}~\mu \text{m}^{{2}}$ , excluding the pads, which is equivalent to ${0.17} \times {0.08} \lambda _{g}^{{2}}$ . ( $\lambda _{g}$ is the guided wavelength at 23.5 GHz.)

Detecting DNA and RNA and Differentiating Single-Nucleotide Variations via Field-Effect Transistors

Abstract: We detect short oligonucleotides and distinguish between sequences that differ by a single base, using label-free, electronic field-effect transistors (FETs). Our sensing platform utilizes ultrathin-film indium oxide FETs chemically functionalized with single-stranded DNA (ssDNA). The ssDNA-functionalized semiconducting channels in FETs detect fully complementary DNA sequences and differentiate these sequences from those having different types and locations of single base-pair mismatches. Changes in charge associated with surface-bound ssDNA vs double-stranded DNA (dsDNA) alter FET channel conductance to enable detection due to differences in DNA duplex stability. We illustrate the capability of ssDNA-FETs to detect complementary RNA sequences and to distinguish from RNA sequences with single nucleotide variations. The development and implementation of electronic biosensors that rapidly and sensitively detect and differentiate oligonucleotides present new opportunities in the fields of disease diagnostics and precision medicine.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.