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Yannick De Koninck

Bio: Yannick De Koninck is an academic researcher from IMEC. The author has contributed to research in topics: Silicon photonics & Laser. The author has an hindex of 7, co-authored 16 publications receiving 287 citations. Previous affiliations of Yannick De Koninck include Katholieke Universiteit Leuven & Ghent University.

Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.
Abstract: In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

131 citations

Patent
24 Feb 2011
TL;DR: In this article, a hybrid laser is described for generating radiation, the hybrid laser (100) comprising an optical passive material (110) and an optical active material (120), and furthermore comprises a first optical waveguide (112) and optical laser components (114) comprising reflectors in the optical passive materials (110).
Abstract: A hybrid laser (100) is described for generating radiation, the hybrid laser (100) comprising an optical passive material (110) and an optical active material (120). The hybrid laser (100) furthermore comprises a first optical waveguide (112) and optical laser components (114) comprising reflectors in the optical passive material (110). The first optical waveguide (112) is adapted for coupling out radiation from the hybrid laser. The laser also comprises a second optical waveguide (122) defined in the optical active material (120). The optical laser components (114) comprise reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide (112) and the second optical waveguide (122). The second optical waveguide (122) thereby is positioned at least partly over the first optical waveguide (112) so that an evanescent coupling interface is defined between the second optical waveguide (122) and the first optical waveguide (112) and the evanescent coupling interface is positioned within the laser cavity.

57 citations

Journal ArticleDOI
TL;DR: The backreflection in commonly used grating couplers on silicon-on-insulator (SOI) is dramatically reduced in the improved compact grates coupler design, which directs the reflection away from the input waveguide.
Abstract: The backreflection in commonly used grating couplers on silicon-on-insulator (SOI) is not negligible for many applications. This reflection is dramatically reduced in our improved compact grating coupler design, which directs the reflection away from the input waveguide. Realized devices on SOI show that the reflection can be reduced down to −50 dB without an apparent transmission penalty.

30 citations

Proceedings ArticleDOI
TL;DR: In this paper, hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication and specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.
Abstract: Hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication. Focus is on specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.

24 citations

Journal ArticleDOI
TL;DR: The presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.
Abstract: While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 μm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.

21 citations


Cited by
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01 Jan 2002
TL;DR: In this article, a review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime.
Abstract: A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

360 citations

Journal ArticleDOI
TL;DR: In this article, the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA) is reviewed. And the similarities and differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition.
Abstract: Silicon Photonics technology is rapidly maturing as a platform for larger-scale photonic circuits. As a result, the associated design methodologies are also evolving from componentoriented design to a more circuit-oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, we review the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA). We cover the design flow from schematic capture, circuit simulation, layout and verification. We discuss the similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition. Silicon Photonics Circuit Design: Methods, Tools and

355 citations

Journal ArticleDOI
18 Oct 2018-Sensors
TL;DR: An overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors, as well as real biomarkers for label-free detection are exhibited and compared.
Abstract: Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

239 citations

Journal ArticleDOI
TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.
Abstract: The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry–Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge0.915Sn0.085 alloy where Γ and L valleys have the same energies....

205 citations

Proceedings ArticleDOI
20 Jun 2009
TL;DR: Phastlane is presented, a hybrid electrical/optical routing network for future large scale, cache coherent multicore microprocessors that achieves 2X better network performance than a state-of-the-art electrical baseline while consuming 80% less network power.
Abstract: Tens and eventually hundreds of processing cores are projected to be integrated onto future microprocessors, making the global interconnect a key component to achieving scalable chip performance within a given power envelope. While CMOS-compatible nanophotonics has emerged as a leading candidate for replacing global wires beyond the 22nm timeframe, on-chip optical interconnect architectures proposed thus far are either limited in scalability or are dependent on comparatively slow electrical control networks.In this paper, we present Phastlane, a hybrid electrical/optical routing network for future large scale, cache coherent multicore microprocessors. The heart of the Phastlane network is a low-latency optical crossbar that uses simple predecoded source routing to transmit cache-line-sized packets several hops in a single clock cycle under contentionless conditions. When contention exists, the router makes use of electrical buffers and, if necessary, a high speed drop signaling network. Overall, Phastlane achieve 2X better network performance than a state-of-the-art electrical baseline while consuming 80% less network power.

190 citations