Yasuhiko Arakawa

TL;DR: In this paper, a new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D), and the effects of such confinements on the lasing characteristics are analyzed.

TL;DR: The spectral response of a monolithic semiconductor quantum microcavity with quantum wells as the active medium displays mode splitting when the quantum wells and the optical cavity are in resonance.

TL;DR: It is demonstrated that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns, and the suppression of QD emission rate is explained using finite difference time domain simulations and finds good agreement with experiment.

TL;DR: In this article, the authors discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics and reveal that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices.

TL;DR: In this article, the authors reported triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling.