We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

https://cyberleninka.org/article/n/247805.pdf

A brief review of atomic layer deposition: from fundamentals to applications

Solid films are usually metastable or unstable in the as-deposited state, and they will dewet or agglomerate to form islands when heated to sufficiently high temperatures. This process is driven by surface energy minimization and can occur via surface diffusion well below a film's melting temperature, especially when the film is very thin. Dewetting during processing of films for use in micro- and nanosystems is often undesirable, and means of avoiding dewetting are important in this context. However, dewetting can also be useful in making arrays of nanoscale particles for electronic and photonic devices and for catalyzing growth of nanotubes and nanowires. Templating of dewetting using patterned surface topography or prepatterning of films can be used to create ordered arrays of particles and complex patterns of partially dewetted structures. Studies of dewetting can also provide fundamental new insight into the effects of surface energy anisotropy and facets on shape evolution.

Solid-State Dewetting of Thin Films

A low temperature thermal cleaning method for Si molecular beam epitaxy (MBE) is proposed. This method consists of wet chemical treatment to eliminate carbon contaminants on Si substrates, thin oxide film formation to protect the clean Si surface from contamination during processing before MBE growth, and desorption of the thin oxide film under UHV. The passivative oxide can be removed at temperatures below 800°C. It is confirmed that Si epitaxial growth can take place on substrates cleaned by this method and that high quality Si layers with dislocations of fewer than 100/cm2 and high mobility comparable to good bulk materials are formed. Surface cleanliness, the nature of thin passivative oxide films, and cleaning processes are also studied by using such surface analytic methods as Auger electron spectroscopy, reflection high energy electron diffraction, and x‐ray photoelectron spectroscopy.

https://iopscience.iop.org/article/10.1149/1.2108651/pdf

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary‐ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three‐dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of the 3D island formation is determined to be 3.7 monolayers (ML). It is also found that the 3D islands grow with only 3.0 ML of the flat Ge layer retained. This implies that only the 3.0 ML Ge is thermodynamically stable on Si(100) and hence corresponds to the ‘‘equilibrium’’ critical thickness.

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

Control of dimension and position of Ge dots on a nanoscale is accomplished by combining Stranski–Krastanov growth mode with selective epitaxial growth technique in windows surrounded by SiO2 films on Si substrates. The dimension and the number of these dots are controlled by the size of the windows, and a single dot is grown in a window with the size of less than 300 nm. Moreover, clear phonon-resolved photoluminescence (PL) is observed from the Ge dots, reflecting the improved uniformity in their dimensions. The PL energy is found to be strongly dependent on the dot’s dimension.

Yasuhiro Shiraki

Papers

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties