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Yasuhiro Uemoto
Researcher at Panasonic
Publications - 156
Citations - 5741
Yasuhiro Uemoto is an academic researcher from Panasonic. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 35, co-authored 156 publications receiving 5060 citations.
Papers
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Journal ArticleDOI
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen,Oliver Häberlen,Alex Lidow,Chun lin Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu +6 more
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Patent
Nitride semiconductor device
TL;DR: In this article, a nitride semiconductor device is defined as: a first semiconductor layer made of first nitride, a second semiconductor, made of second nitride having a bandgap wider than that of the first, a control layer selectively formed on, or above, an upper portion of the second, and a third semiconductor having a p-type conductivity.
Patent
Field effect transistor and method for fabricating the same
TL;DR: In this article, an AlN buffer layer, an undoped GaN layer, undoped AlGaN layer and a heavily doped p-type GaN layers are formed in this order.
Patent
Nitride semiconductor device and method for manufacturing same
TL;DR: In this paper, a nitride semiconductor device with a semiconductor multilayer body is described, where a gate electrode (109) is in Schottky contact with the third-layer gate.