Yasuo Ando

TL;DR: Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

TL;DR: In this paper, magnetic tunnel junctions (MTJ) with a stacking structure of Co2MnSi∕Al-O∕Co2mnSi were fabricated using magnetron sputtering system and exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature.

TL;DR: In this paper, the influence of spin diffusion driven by the precession of magnetization on Gilbert damping was investigated using the Landau-Lifshitz-Gilbert equation that takes into account the local variation of the effective demagnetizing field.

TL;DR: In this article, the out-of-plane angular dependence of ferromagnetic resonance (FMR) was measured for NM/80NiFe(Py)/NM (NM=Cu, Ta, Pd and Pt) films with various Py, Cu and Ta thicknesses fabricated by magnetron sputtering.

TL;DR: First-principles calculations well describe both low α and large K(u) for these alloys, and the damping constant α, characterizing macroscopic spin relaxation and being a key factor in spin-transfer-torque systems, is not larger than 0.008 for the δ=1.46 (0.88) film.