Y
Yi Cui
Researcher at Stanford University
Publications - 1109
Citations - 245406
Yi Cui is an academic researcher from Stanford University. The author has contributed to research in topics: Anode & Lithium. The author has an hindex of 220, co-authored 1015 publications receiving 199725 citations. Previous affiliations of Yi Cui include KAIST & University of California, Berkeley.
Papers
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Journal ArticleDOI
Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires
Matthew T. McDowell,Yi Cui +1 more
TL;DR: In this article, the electrical properties of single Si nanowires at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM) were investigated.
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General Strategy for Zero-Valent Intercalation into Two-Dimensional Layered Nanomaterials
TL;DR: In this article, a chemical method was used to intercalate high densities of copper (up to 55 atomic percent) into synthesized nanomaterials such as MoO3, Sb2Te3, In2Se3, and GaSe.
Journal ArticleDOI
In Situ X-ray Absorption Spectroscopic Investigation of the Capacity Degradation Mechanism in Mg/S Batteries.
Yan Xu,Yan Xu,Yifan Ye,Shuyang Zhao,Jun Feng,Jia Li,Hao Chen,Ankun Yang,Feifei Shi,Lujie Jia,Yang Wu,Xiaoyun Yu,Per Anders Glans-Suzuki,Yi Cui,Jinghua Guo,Yuegang Zhang,Yuegang Zhang +16 more
TL;DR: This work proposes to use TiS2 as a catalyst to activate the irreversible reaction of low-order MgS x and M gS, which results in an increased discharging capacity up to 900 mAh·g-1 and a longer cycling life.
Journal ArticleDOI
Gate-Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.
Chun-Lan Wu,Hongtao Yuan,Hongtao Yuan,Hongtao Yuan,Yanbin Li,Yongji Gong,Yongji Gong,Harold Y. Hwang,Yi Cui,Yi Cui +9 more
TL;DR: An all solid-state EDL device based on a solid superionic conductor LaF3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access.