Yijie Huo

Bio: Yijie Huo is an academic researcher from Stanford University. The author has contributed to research in topics: Solar cell & Quantum well. The author has an hindex of 25, co-authored 107 publications receiving 2575 citations.

Solar water splitting by photovoltaic-electrolysis with a solar-to-hydrogen efficiency over 30

Abstract: Hydrogen production via electrochemical water splitting is a promising approach for storing solar energy For this technology to be economically competitive, it is critical to develop water splitting systems with high solar-to-hydrogen (STH) efficiencies Here we report a photovoltaic-electrolysis system with the highest STH efficiency for any water splitting technology to date, to the best of our knowledge Our system consists of two polymer electrolyte membrane electrolysers in series with one InGaP/GaAs/GaInNAsSb triple-junction solar cell, which produces a large-enough voltage to drive both electrolysers with no additional energy input The solar concentration is adjusted such that the maximum power point of the photovoltaic is well matched to the operating capacity of the electrolysers to optimize the system efficiency The system achieves a 48-h average STH efficiency of 30% These results demonstrate the potential of photovoltaic-electrolysis systems for cost-effective solar energy storage

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

Abstract: We synthesized up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1−yAs buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge1−xSnx layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b = 2.1 ± 0.1. According to our models, these are the first Ge1−xSnx samples that are both direct-bandgap and exhibit PL.

Electrically driven subwavelength optical nanocircuits

Abstract: An integrated nanoscale light-emitting diode is used as an electrically driven optical source for exciting two-dimensionally localized gap plasmon waveguides with a 0.016λ2 cross-sectional area. Electrically driven subwavelength optical nanocircuits for routing, splitting and directional coupling are demonstrated in compact and relatively low-loss gap plasmon waveguide structures.

Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

Abstract: Highly tensile-strained layers of Ge were grown via molecular beam epitaxy using step-graded InxGa1−xAs buffer layers on (100) GaAs. These layers have biaxial tensile-strain of up to 2.33%, have surface roughness of <1.1 nm, and are of high quality as seen with transmission electron microscopy. Low-temperature photoluminescence (PL) suggests the existence of direct-bandgap Ge when the strain is greater than 1.7%, and we see a greater than 100× increase in the PL intensity of the direct transition with 2.33% tensile-strain over the unstrained case. These results show promise for the use of tensile-strained Ge in optoelectronics monolithically integrated on Si.

Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

Abstract: Unstrained and compressive-strained Ge1−xSnx alloys were grown on InGaAs buffer layers by molecular beam epitaxy. Photoreflectance at room temperature determines the direct bandgap energies of Ge1−xSnx alloys from the maxima of the light- and heavy-hole bands to the bottom of Γ valley. The lowest transition energies from photoreflectance are consistent with the energies derived from photoluminescence. The calculated bowing parameter is 2.42 ± 0.04 eV for the direct band gap of Ge1−xSnx alloys. The dilational and shear deformation potentials of the direct band gap are −11.04 ± 1.41 eV and −4.07 ± 0.91 eV, respectively. These basic material parameters are important in designing optoelectronic devices based on Ge1−xSnx alloys.

Silicon optical modulators

Abstract: Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

Recent developments in heterogeneous photocatalysts for solar-driven overall water splitting

Abstract: Overall water splitting based on particulate photocatalysts is an easily constructed and cost-effective technology for the conversion of abundant solar energy into clean and renewable hydrogen energy on a large scale. This promising technology can be achieved in a one-step excitation system using a single photocatalyst or via a Z-scheme process based on a pair of photocatalysts. Ideally, such photocatalysis will proceed with charge separation and transport unaffected by recombination and trapping, and surface catalytic processes will not involve undesirable reactions. This review summarizes the basics of overall water splitting via both one-step excitation and Z-scheme processes, with a focus on standard methods of determining photocatalytic performance. Various surface engineering strategies applied to photocatalysts, such as cocatalyst loading, surface morphology control, surface modification and surface phase junctions, have been developed to allow efficient one-step excitation overall water splitting. In addition, numerous visible-light-responsive photocatalysts have been successfully utilized as H2-evolution or O2-evolution photocatalysts in Z-scheme overall water splitting. Prototype particulate immobilization systems with photocatalytic performances comparable to or drastically higher than those of particle suspension systems suggest the exciting possibility of the large-scale production of low-cost renewable solar hydrogen.

Colloquium : Topological band theory

Abstract: First-principles band theory, properly augmented by topological considerations, has provided a remarkably successful framework for predicting new classes of topological materials. This Colloquium discusses the underpinnings of the topological band theory and its materials applications.

Materials for solar fuels and chemicals

Abstract: The conversion of sunlight into fuels and chemicals is an attractive prospect for the storage of renewable energy, and photoelectrocatalytic technologies represent a pathway by which solar fuels might be realized. However, there are numerous scientific challenges in developing these technologies. These include finding suitable materials for the absorption of incident photons, developing more efficient catalysts for both water splitting and the production of fuels, and understanding how interfaces between catalysts, photoabsorbers and electrolytes can be designed to minimize losses and resist degradation. In this Review, we highlight recent milestones in these areas and some key scientific challenges remaining between the current state of the art and a technology that can effectively convert sunlight into fuels and chemicals.

Lasing in direct-bandgap GeSn alloy grown on Si

Abstract: Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.