Yijun Yu

TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.

TL;DR: It is found that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy, which opens up opportunities for potential voltage-controlled magnetoelectronics based on atomically thin van der Waals crystals.

TL;DR: In this paper, it was shown that the itinerant ferromagnetic order persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy.

TL;DR: This work probes quantum transport in MnBi2Te4 thin flakes—a topological insulator with intrinsic magnetic order that becomes ferromagnetic when the sample has an odd number of septuple layers and establishes MnBi 2Te4 as an ideal arena for further exploring various topological phenomena with a spontaneously broken time-reversal symmetry.

TL;DR: An ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2, opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.