Yingquan Peng

Bio: Yingquan Peng is an academic researcher from China Jiliang University. The author has contributed to research in topics: Heterojunction & Organic semiconductor. The author has an hindex of 15, co-authored 88 publications receiving 747 citations. Previous affiliations of Yingquan Peng include Lanzhou University.

Ultrasensitive flexible broadband photodetectors achieving pA scale dark current

Abstract: Organolead halide perovskite is a newly emerging low-cost, solution-processable material with a broadband absorption from the ultraviolet (UV) to visible (Vis) region, which has attracted a great deal of interest in high-performance optoelectronic devices. However, some practicable applications need a cover of UV–Vis–NIR region for photoelectric conversion, a task that remains a significant challenge for further extending the absorption toward the near-infrared radiation (NIR) region. Here, to the best of our knowledge, we prove for the first time an ultrasensitive flexible broadband photodetector based on porous organolead perovskite-phthalocyanine heterostructure, which combines the synergetic properties of high UV–Vis absorbance of perovskite with enhanced NIR absorption for triclinic lead phthalocyanine. The photosensitivity of the as-prepared devices reaches up to 104 at a low intensity of 10 mW cm−2, which is among the largest values reported for broadband photodetectors. Significantly, performed at room temperature, the device achieves a pA scale dark current along with an ultrafast response speed of less than 0.6 ms for as-adopted full spectra. Our results provide an easy and promising route to develop low-cost, flexible and highly sensitive UV–Vis–NIR photodetectors. Energy efficient and flexible alternative photodetector that detects both visible and invisible light comes closer to real life than ever. A group of researchers from China has developed an organic-inorganic hybrid photodetector that outperforms conventional inorganic like Si and InGaAs-based photodetectors in at least two aspects: broader detection spectral range and much lower dark current. Thanks to the structural flexibility of two hybrid photosensitive materials, methyl-ammonium lead halide and lead phthalocyanine, the team engineered the large area sub-micron thick photodetector with porous structures, which is the key to reducing the standby power consumption by more than 30 times compared to the best InGaAs and Si-based photodetectors. More importantly, the hybrid photodetector needs no additional apparatus or power to cool it for continuous operation, in contrast to the InGaAs photodetector.

Photoresponsivity enhancement of pentacene organic phototransistors by introducing C60 buffer layer under source/drain electrodes

Abstract: Pentacene organic phototransistors (OPTs) modified by introducing C60 electrodes buffer layer were fabricated. Compared with conventional single-layer pentacene OPTs, the devices with C60 buffer layer exhibited higher performance under illumination. Maximum photoresponsivity is 4.27 A/W at zero gate bias under 0.2 mW cm(-2), which is six times higher than that of single-layer device and exceeds that of most OPTs reported recently in the same conditions. The maximum photo/dark current ratio is also higher than 5 x 10(4). Meanwhile, the C60 modified device could obtain lower threshold voltage and higher field-effect mobility. These results suggest that single-layer OPTs modified by heterojunction buffer layer will obtain better optical response. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756937]

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Perovskite-based photodetectors: materials and devices

Abstract: While the field of perovskite-based optoelectronics has mostly been dominated by photovoltaics, light-emitting diodes, and transistors, semiconducting properties peculiar to perovskites make them interesting candidates for innovative and disruptive applications in light signal detection. Perovskites combine effective light absorption in the broadband range with good photo-generation yield and high charge carrier mobility, a combination that provides promising potential for exploiting sensitive and fast photodetectors that are targeted for image sensing, optical communication, environmental monitoring or chemical/biological detection. Currently, organic–inorganic hybrid and all-inorganic halide perovskites with controlled morphologies of polycrystalline thin films, nano-particles/wires/sheets, and bulk single crystals have shown key figure-of-merit features in terms of their responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed. The sensing region has been covered from ultraviolet-visible-near infrared (UV-Vis-NIR) to gamma photons based on two- or three-terminal device architectures. Diverse photoactive materials and devices with superior optoelectronic performances have stimulated attention from researchers in multidisciplinary areas. In this review, we provide a comprehensive overview of the recent progress of perovskite-based photodetectors focusing on versatile compositions, structures, and morphologies of constituent materials, and diverse device architectures toward the superior performance metrics. Combining the advantages of both organic semiconductors (facile solution processability) and inorganic semiconductors (high charge carrier mobility), perovskites are expected to replace commercial silicon for future photodetection applications.

Intermediate-spin state and properties of LaCoO_3

Abstract: The electronic structure of the perovskite LaCoO$_3$ for different spin states of Co ions was calculated in the LDA+U approach. The ground state was found to be a nonmagnetic insulator with Co ions in a low-spin state. Somewhat higher in energy we found two intermediate-spin states followed by a high-spin state at significantly higher energy. The calculation results show that Co 3$d$ states of $t_{2g}$ symmetry form narrow bands which could easily localize whilst $e_g$ orbitals, due to their strong hybridization with the oxygen 2$p$ states, form a broad $\sigma^*$ band. With the increase of temperature which is simulated by the corresponding increase of the lattice parameter, the transition from the low- to intermediate-spin states occurs. This intermediate-spin (occupation $t_{2g}^5e_g^1$) can develop an orbital ordering which can account for the nonmetallic nature of LaCoO$_3$ at 90 K$<$T$<$500 K. Possible explanations of the magnetic behavior and gradual insulating-metal transition are suggested.

Recent progress on highly sensitive perovskite photodetectors

Abstract: Perovskite photodetectors (PPDs), which combine the advantages of perovskite semiconductor materials with superior optical and electronic properties and solution-processed manufacturing, have emerged as a new class of revolutionary optoelectronic devices with potential for various practical applications. Encouraged by the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of perovskite materials with interesting optoelectronic properties, increasing research attention is focused on the development of high performance PPDs. In this review, the recent progress on emerging PPDs is comprehensively summarized from the perspective of device physics and materials science. The strategies for extending the spectral response range of PPDs and improving the performance of devices are investigated. Furthermore, the methods for realizing narrowband photodetectors are also discussed, where filter-free and self-filter narrowband PPDs are achieved based on the concept of charge collection narrowing. Meanwhile, the promising future directions in this research field are proposed and discussed, including multifunctional PPDs, perovskite–organic hybrid photodetectors, flexible and transparent PPDs, self-powered PPDs, and photodetector systems and arrays. This review provides valuable insights into the current status of highly sensitive PPDs and will spur the design of new structures and devices to further enhance their photo-detection performances and meet the need of versatility in practical application.

Multi-functional integration of organic field-effect transistors (OFETs): advances and perspectives.

Abstract: Multi-functional organic field-effect transistors (OFETs), an emerging focus of organic optoelectronic devices, hold great potential for a variety of applications. This report introduces recent progress on multi-functional OFETs including OFETs based sensors, phototransistors, light-emitting transistors, memory cells, and magnetic field-effect OFETs. Key strategies towards multi- functional integration of OFETs, which involves the exploration of functional materials, interfaces modifications, modulation of condensed structures, optimization of device geometry, and device integration, are summarized. Furthermore, remaining challenges and perspectives are discussed, giving a comprehensive overview of multi-functional OFETs.