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Yong-Mo Choi

Bio: Yong-Mo Choi is an academic researcher from Samsung. The author has contributed to research in topics: Thin-film transistor & Layer (electronics). The author has an hindex of 9, co-authored 13 publications receiving 1191 citations.

Papers
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Patent
10 Apr 2008
TL;DR: In this paper, a method of manufacturing a thin-film transistor (TFT) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first pattern group, forming an amorphous silicon layer and an oxide semiconductor layer, and forming a protection layer including a contact hole on the second pattern group.
Abstract: A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

1,036 citations

Patent
Kap-Soo Yoon1, Sung-Hoon Yang1, Sung-Ryul Kim1, Hwa-Yeul Oh1, Jae-Ho Choi1, Yong-Mo Choi1 
13 Jan 2009
TL;DR: In this paper, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein, and a pixel electrode is electrically connected to the data wiring, and the second energy band gap is larger than the first energy bandgap.
Abstract: Provided are a display substrate and a display device including the same. The display substrate includes: gate wiring; a first semiconductor pattern formed on the gate wiring and having a first energy bandgap; a second semiconductor pattern formed on the first semiconductor pattern and having a second energy bandgap which is greater than the first energy bandgap; data wiring formed on the first semiconductor pattern; and a pixel electrode electrically connected to the data wiring. Because the second energy bandgap is larger than the first energy bandgap, a quantum well is formed in the first semiconductor pattern, enhancing electron mobility therein.

35 citations

Patent
Jae-Ho Choi1, Sung-Hoon Yang1, Kap-Soo Yoon1, Sung-Ryul Kim1, Hwa-Yeul Oh1, Yong-Mo Choi1 
30 Oct 2008
TL;DR: In this article, a display substrate, a display device including the display substrate and a method of fabricating the display substrategies is described, including a gate electrode, a gate-insulating layer, an oxide semiconductor pattern, and a drain electrode separated from the source electrode.
Abstract: A display substrate, a display device including the display substrate, and a method of fabricating the display substrate are provided. The display substrate includes a gate electrode; a gate-insulating layer disposed on the gate electrode; an oxide semiconductor pattern disposed on the gate-insulating layer; a source electrode disposed on the oxide semiconductor pattern; and a drain electrode disposed on the oxide semiconductor pattern and separated from the source electrode, wherein at least one portion of at least one of the gate-insulating layer or the oxide semiconductor pattern is plasma-processed.

18 citations

Patent
Byoung-June Kim1, Sung-Hoon Yang1, Oh Min Seok1, Jae-Ho Choi1, Yong-Mo Choi1 
03 Oct 2006
TL;DR: A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer, which is formed to suppress oxidation of the active layer and reduce contact resistance as discussed by the authors.
Abstract: A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

16 citations

Journal ArticleDOI
01 Jun 2006
TL;DR: In this article, a 14.1-inch AMOLED display using micro-crystalline silicon (mc-Si) TFTs was developed, which showed no significant shift in threshold voltage when applied with a long time constant current stress, indicating a stable TFT backplane.
Abstract: We have developed a 14.1 inch AMOLED display using microcrystalline silicon (mc-Si) TFTs. Microcrystalline silicon was deposited using conventional 13.56MHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Detailed thin film characterization of mc-Si films was followed by development of mc-Si TFTs which show a field effect mobility of around 0.7∼1.0cm2/V.s. The mc-Si TFTs show no significant shift in threshold voltage when applied with a long time constant current stress, indicating a stable TFT backplane. The mc-Si TFTs were successfully integrated in a 14.1 inch AMOLED display. The display shows no significant current decrease in the driving TFT of the 2T circuit, even after long time of lifetime tests. Along with improved lifetime for AMOLED display, the development of mc-Si TFTs using conventional 13.56 MHz PECVD system offers significant cost advantages over other laser or non-laser polysilicon TFT technologies for AMOLED.

15 citations


Cited by
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Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
25 Sep 2013
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

1,136 citations

Patent
11 Nov 2008
TL;DR: In this article, a plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to reduce a partial depression and also to ensure contact resistance.
Abstract: It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

1,021 citations

Patent
04 Dec 2008
TL;DR: In this paper, a photoensitive material solution of a conductive film is selectively discharged by a droplet discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to the laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging.
Abstract: The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

1,001 citations

Patent
22 Jun 2009
TL;DR: In this paper, a gate-insulated thin-film transistor with a halogen block in between the blocking layer and a gate insulator is described. But the block is not used to prevent the transistor from being contaminated with impurities such as alkali ions.
Abstract: A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

348 citations