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Yongxian Fan

Researcher at Zhejiang University of Technology

Publications -  53
Citations -  2255

Yongxian Fan is an academic researcher from Zhejiang University of Technology. The author has contributed to research in topics: Quantum dot & Molecular beam epitaxy. The author has an hindex of 15, co-authored 52 publications receiving 2101 citations. Previous affiliations of Yongxian Fan include Nanjing University & Zhejiang University.

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Chemoselective catalytic conversion of glycerol as a biorenewable source to valuable commodity chemicals

TL;DR: This paper provides a comprehensive review and critical analysis on the different reaction pathways for catalytic conversion of glycerol into commodity chemicals, including selective oxidation, selective hydrogenolysis, selective dehydration, pyrolysis and gasification, steam reforming, thermal reduction into syngas, selective transesterification, selective etherification, oligomerization and polymerization, and conversion of Glycerol carbonate.
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Chemoselective Catalytic Conversion of Glycerol as a Biorenewable Source to Valuable Commodity Chemicals

TL;DR: In this article, a comprehensive review and critical analysis on the different reaction pathways for catalytic conversion of glycerol into commodity chemicals, including selective oxidation, selective hydrogenolysis, selective dehydration, pyrolysis and gasification, steam reforming, thermal reduction into syngas, selective transesterification, selective etherification, oligomerization and polymerization are presented.
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Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy

TL;DR: In this article, the shape transformation from QDs to QRs is discussed and the mechanism of transformation from qd to qr is discussed, where the strain will redistribute after capping, thus the strain energy relief, together with high Ge surface diffusion and Ge surface segregation at a relative high temperature of 680 °C, play the dominant role.
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Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates

TL;DR: In this article, Er2O3 thin films were epitaxially grown on Si (001) substrates and the dielectric constant of the film with an equivalent oxide thickness of 2.0nm is 14.4.
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Band offsets of Er2O3 films epitaxially grown on Si substrates

TL;DR: In this article, the experimental data on band alignments of high-k Er2O3 films epitaxially grown on Si substrates by molecular beam epitaxy are reported by using x-ray photoelectron spectroscopy.