We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An apparatus may include a semiconductor chip and a fluidics assembly. The semiconductor chip has an array of wells and an array of sensors and each sensor of the array of sensors is in fluid communication with a well of the array of wells. The fluidics assembly is located on top of the semiconductor chip and is configured to deliver fluids to the semiconductor chip. The fluidics assembly includes a flow expansion chamber configured to introduce the fluids, an outlet portion configured to pipe out the fluids, and a flow chamber portion. The flow chamber portion is configured to allow the fluids to flow from the flow expansion chamber to the outlet portion and to allow the fluids to interact along the way with material in the array of wells. The flow expansion chamber has a curved wall at the top or bottom so that the height of the flow expansion chamber at the center is less than at the walls that restrict the fluids to the left and right.

Methods and apparatus for measuring analytes using large scale fet arrays

We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

https://iopscience.iop.org/article/10.1143/JJAP.35.1273/pdf

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.

GaInNAs: a novel material for long-wavelength semiconductor lasers

We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm2, and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements. The light reflecting plane has a structure as viewed on a cross section in a plane transverse to the module light receiving plane and traversing adjacent two photovoltaic elements and a light reflecting member therebetween such that the light reflecting plane includes, at least two first inclined planes and at least two second inclined planes, the first inclined planes being rightwardly ascending while the second inclined planes are leftwardly ascending, respectively, at least two first inclined planes being arranged on a right side of a middle point of a distance between the adjacent two photovoltaic elements while at least two second inclined planes being arranged on a left side of the middle point.

Light concentrator photovoltaic module method of manufacturing same and light concentrator photovoltaic system

Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like. In this module, each concentrator is formed into such a shape as to satisfy a relationship in which the light trapping efficiency of first incident light tilted rightwardly from the normal line of the light-incident plane in the cross-section including the light-incident plane, reflection plane and photo detector is larger than the light trapping efficiency of second incident light tilted leftwardly from the normal line in the above cross-section. Also, these concentrators are arranged in one direction.

Yoshiaki Yazawa

Papers

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

GaInNAs: a novel material for long-wavelength semiconductor lasers

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

Light concentrator photovoltaic module method of manufacturing same and light concentrator photovoltaic system

Photovoltaic device, photovoltaic module and establishing method of photovoltaic system